Inventor · disambiguated record
Wei-Chiang Shih
Also filed as: SHIH WEI-CHIANG
14 granted patents·1 pending application·93 citations·filing 2007–2018
90Inventor score
Top patents by PatentIndex Score
15 records- 0191US8345504B2Data-aware dynamic supply random access memoryFARADAY TECH CORP·Filed 2011·Granted Jan 1, 2013·16 cites·10 claims
- 0290US8320164B2Static random access memory with data controlled power supplyCHUANG CHING-TE·Filed 2011·Granted Nov 27, 2012·21 cites·19 claims
- 0387US8659936B2Low power static random access memoryCHUANG CHING-TE·Filed 2010·Granted Feb 25, 2014·13 cites·4 claims
- 0487US8325512B2SRAM writing system and related apparatusCHUANG CHING-TE·Filed 2011·Granted Dec 4, 2012·15 cites·16 claims
- 0578US8804445B2Oscillato based on a 6T SRAM for measuring the bias temperature instabilityCHUANG CHING-TE·Filed 2012·Granted Aug 12, 2014·7 cites·9 claims
- 0673US9213789B2Method of generating optimized memory instances using a memory compilerM31 TECHNOLOGY CORP·Filed 2012·Granted Dec 15, 2015·4 cites·16 claims
- 0772US8213257B2Variation-tolerant word-line under-drive scheme for random access memoryCHUANG CHING-TE·Filed 2010·Granted Jul 3, 2012·5 cites·12 claims
- 0868US10692568B2Memory device capable of releasing stress voltageM31 TECH CORP·Filed 2018·Granted Jun 23, 2020·3 cites·11 claims
- 0965US8582378B1Threshold voltage measurement deviceCHUANG CHING-TE·Filed 2012·Granted Nov 12, 2013·4 cites·10 claims
- 1064US7889541B22T SRAM cell structureFARADAY TECH CORP·Filed 2009·Granted Feb 15, 2011·5 cites·19 claims
- 1148US10795767B2Error correcting system shared by multiple memory devicesM31 TECH CORP·Filed 2018·Granted Oct 6, 2020·0 cites·20 claims
- 1244US7548456B2Combo memory cellFARADAY TECH CORP·Filed 2007·Granted Jun 16, 2009·0 cites·20 claims
- 1336US10692567B2Method for assisting memory cell in access operation and operating memory cell, and memory device having assist circuit with predefined assist strengthM31 TECH CORP·Filed 2018·Granted Jun 23, 2020·0 cites·20 claims
- 1433US2013223136A1SRAM based on 6 transistor structure including a first inverter, a second inverter, a first pass-gate transistor, and a second pass-gate transistorCHUANG CHING-TE·Filed 2012·Application pending·0 cites
- 1530US9378808B2Pulse width modulation deviceM31 TECHNOLOGY CORP·Filed 2015·Granted Jun 28, 2016·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →