Inventor · disambiguated record
Wen-Jye Tsai
Also filed as: TSAI WEN-JYE
4 granted patents·285 citations·filing 1999–2000
82Inventor score
Files withTAIWAN SEMICONDUCTOR MFG4
Top patents by PatentIndex Score
4 records- 0190US6224737B1Method for improvement of gap filling capability of electrochemical deposition of copperTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 1, 2001·112 cites·21 claims
- 0289US6319831B1Gap filling by two-step platingTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Nov 20, 2001·69 cites·22 claims
- 0383US6140241AMulti-step electrochemical copper deposition process with improved filling capabilityTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 31, 2000·72 cites·24 claims
- 0467US6620725B1Reduction of Cu line damage by two-step CMPTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Sep 16, 2003·32 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →