Inventor · disambiguated record
Wen-Hsien Tu
Also filed as: TU WEN-HSIEN
10 granted patents·13 pending applications·5 citations·filing 2014–2025
81Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD12INVENT AND COLLABORATION LABORATORY INC7INVENT AND COLLABORATION LABORATORY PTE LTD2NAT APPLIED RES LABORATORIES1TAIWAN SEMICONDUCTOR MFG1
Top patents by PatentIndex Score
23 records- 0183US9391078B1Method and structure for finFET devicesTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jul 12, 2016·4 cites·20 claims
- 0282US2025311312A1Source and drain epitaxial layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0380US11600728B2Method of manufacturing a facet-free source/drain epitaxial structure having an amorphous or polycrystalline layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 7, 2023·1 cites·20 claims
- 0480US2025318177A1Semiconductor structure having a source/drain epitaxial stack with a non-crystalline layer thereinTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0579US12513938B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 30, 2025·0 cites·20 claims
- 0679US2025391734A1Semiconductor circuit structure and method for forming the sameINVENT AND COLLABORATION LABORATORY INC·Filed 2025·Application pending·0 cites
- 0778US12446268B2Source and drain epitaxial layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·20 claims
- 0875US2025331289A1Integrated circuit device with source/drain feature having controlled profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0974US12419101B2Integrated circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 16, 2025·0 cites·20 claims
- 1073US12396203B2Semiconductor structure having a source/drain epitaxial stack with a non-crystalline layer thereinTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 19, 2025·0 cites·20 claims
- 1173US2024105846A1Transistor structure and formation method thereofINVENT AND COLLABORATION LABORATORY PTE LTD·Filed 2023·Application pending·0 cites
- 1273US2024107746A1Memory device and manufacturing method thereofINVENT AND COLLABORATION LABORATORY PTE LTD·Filed 2023·Application pending·0 cites
- 1369US12021144B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 25, 2024·0 cites·20 claims
- 1469US2025336760A1Semiconductor circuit structure and method for forming the sameINVENT AND COLLABORATION LABORATORY INC·Filed 2025·Application pending·0 cites
- 1566US2025203838A1Semiconductor cell structureINVENT AND COLLABORATION LABORATORY INC·Filed 2024·Application pending·0 cites
- 1664US11502197B2Source and drain epitaxial layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 15, 2022·0 cites·20 claims
- 1762US2025380483A1Transistor structure and method for forming the sameINVENT AND COLLABORATION LABORATORY INC·Filed 2024·Application pending·0 cites
- 1861US11862519B2Integrated circuit device with epitaxial features having adjusted profile and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·0 cites·20 claims
- 1960US2025015187A1Transistor structure with multiple vertical thin bodiesINVENT AND COLLABORATION LABORATORY INC·Filed 2024·Application pending·0 cites
- 2059US11222980B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 11, 2022·0 cites·20 claims
- 2158US2024413159A1Complementary metal-oxide-semiconductor circuitINVENT AND COLLABORATION LABORATORY INC·Filed 2024·Application pending·0 cites
- 2249US2025266353A1Semiconductor device structures and methods for forming the sameINVENT AND COLLABORATION LABORATORY INC·Filed 2025·Application pending·0 cites
- 2341US2015380552A1Transistor structure and method for manufacturing the sameNAT APPLIED RES LABORATORIES·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →