Inventor · disambiguated record
Wen-Han Wang
Also filed as: WANG WEN · WANG WEN-HAN
16 granted patents·8 pending applications·284 citations·filing 1994–2024
93Inventor score
Top patents by PatentIndex Score
24 records- 0196US7254059B2Multilevel phase-change memory element and operating methodIND TECH RES INST·Filed 2005·Granted Aug 7, 2007·130 cites·23 claims
- 0294US9806611B2Voltage generating circuits based on a power-on control signalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 31, 2017·15 cites·20 claims
- 0392US7569845B2Phase-change memory and fabrication method thereofIND TECH RES INST·Filed 2006·Granted Aug 4, 2009·24 cites·7 claims
- 0490US9184586B2SiGe based gate driven PMOS trigger circuitWANG WEN-HAN·Filed 2012·Granted Nov 10, 2015·16 cites·21 claims
- 0581US7643373B2Driving method and system for a phase change memorySHEU SHYH-SHYUAN·Filed 2007·Granted Jan 5, 2010·13 cites·22 claims
- 0678US7626191B2Lateral phase change memory with spacer electrodesIND TECH RES INST·Filed 2006·Granted Dec 1, 2009·10 cites·8 claims
- 0772US7835177B2Phase change memory cell and method of fabricatingIND TECH RES INST·Filed 2006·Granted Nov 16, 2010·6 cites·9 claims
- 0872US2025096043A1Dielectric cap structure in semiconductor devices and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0971US10637463B2Voltage level shifting circuits and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 28, 2020·1 cites·20 claims
- 1070US5682516AComputer system that maintains system wide cache coherency during deferred communication transactionsINTEL CORP·Filed 1994·Granted Oct 28, 1997·58 cites·38 claims
- 1168US8648425B2Resistors formed based on metal-oxide-semiconductor structuresWANG WEN-HAN·Filed 2011·Granted Feb 11, 2014·3 cites·14 claims
- 1265US9628080B2Voltage generating circuits based on a power-on control signalWANG WEN-HAN·Filed 2013·Granted Apr 18, 2017·2 cites·22 claims
- 1365US7923286B2Method of fabricating a phase-change memoryNANYA TECHNOLOGY CORP·Filed 2009·Granted Apr 12, 2011·2 cites·6 claims
- 1463US8207755B1Low leakage power detection circuitWANG WEN-HAN·Filed 2011·Granted Jun 26, 2012·2 cites·20 claims
- 1559US7598113B2Phase change memory device and fabricating method thereforIND TECH RES INST·Filed 2006·Granted Oct 6, 2009·1 cites·15 claims
- 1655US7670871B2Method of fabricating a phase-change memoryCHEN YI-CHAN·Filed 2008·Granted Mar 2, 2010·1 cites·13 claims
- 1754US7868314B2Phase change memory device and fabricating method thereforIND TECH RES INST·Filed 2009·Granted Jan 11, 2011·0 cites·12 claims
- 1844US2007291533A1Phase change memory device and fabrication method thereofIND TECH RES INST·Filed 2007·Application pending·0 cites
- 1944US2007290185A1Phase change memory cells and methods for fabricating the sameIND TECH RES INST·Filed 2006·Application pending·0 cites
- 2042US2007040159A1Manufacturing method and structure for improving the characteristics of phase change memoryWANG WEN-HAN·Filed 2006·Application pending·0 cites
- 2140US2007007613A1Phase change memory with adjustable resistance ratio and fabricating method thereofWANG WEN-HAN·Filed 2005·Application pending·0 cites
- 2238US2007249083A1Multilevel phase-change memory element and operating methodIND TECH RES INST·Filed 2007·Application pending·0 cites
- 2336US2007148862A1Phase-change memory layer and method of manufacturing the same and phase-change memory cellCHEN YI-CHAN·Filed 2006·Application pending·0 cites
- 2432US2006077741A1Multilevel phase-change memory, manufacturing and status transferring method thereofWANG WEN-HAN·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →