Inventor · disambiguated record
Wei-Yen Woon
Also filed as: WOON WEI-YEN
18 granted patents·68 pending applications·67 citations·filing 2008–2025
90Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD82TAIWAN SEMICONDUCTOR MFG1UNIV NAT CENTRAL1UNIV NAT TSING HUA1WOON WEI-YEN1
Top patents by PatentIndex Score
86 records- 0193US7838887B2Source/drain carbon implant and RTA anneal, pre-SiGe depositionTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Nov 23, 2010·26 cites·10 claims
- 0292US8404546B2Source/drain carbon implant and RTA anneal, pre-SiGe depositionWOON WEI-YEN·Filed 2010·Granted Mar 26, 2013·35 cites·16 claims
- 0390US12336235B2Semiconductor device having isolation structure formed of low-k dielectric material and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·1 cites·14 claims
- 0487US12131954B1Selective epitaxy process for the formation of CFET local interconnectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 29, 2024·1 cites·20 claims
- 0586US12218225B1Radical treatment in supercritical fluid for gate dielectric quality improvement to CFET structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 0686US12166079B22D channel transistors with low contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 10, 2024·1 cites·20 claims
- 0786US12136570B2Graphene layer for low resistance contacts and damascene interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 5, 2024·1 cites·20 claims
- 0881US2025366185A1P-dipole material for stacked transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0981US2025357124A1N-dipole material for stacked transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1080US2025359287A1Self-aligned patterning layer for metal gate formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1180US2025359280A1Bottom-up metal gate for stacked device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1279US2025351569A1Dipole-first approach to fabricate a top-tier device of a complementary field effect transistor (cfet)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1379US2025357341A1Interconnect structures with conductive carbon layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1479US2025359173A1Stacked multi-gate device with barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1578US2025169092A1Radical Treatment in Supercritical Fluid for Gate Dielectric Quality Improvement to CFET StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1678US2025357111A1Dielectric densificationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1778US2025364477A1Semiconductor device and method having high-kappa bonding layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1877US2025351548A1Dielectric materials for stacked transistor structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1977US2025359292A1Gate Patterning for Stacked Device StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2077US2025343089A1Heat dissipation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2177US2025351550A1Stacked multi-gate device with contact feature and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2276US2025357241A1Heat sink for stacked multi-gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2376US2025357197A1Thermal conductive barrier layer in interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2476US2025349535A1Semiconductor Device Having Dielectric Material Treated with Microwave Plasma and Method of Fabricating ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2575US2025316482A1Gate electrode deposition in stacking transistors and structures resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2675US2025351547A1Semiconductor Device and Method of Fabricating ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2775US2024395901A1Semiconductor device, and method for protecting low-k dielectric feature of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2875US2025336762A1Integrated circuit device with thermoelectric coolingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2975US2025351450A1Metal features of a semiconductor device and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3075US2025351568A1Complementary field-effect transistor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3174US2025169091A1Radical Treatment in Supercritical Fluid for Gate Dielectric Quality Improvement to CFET StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3274US2024395889A1Graphene wrap-around contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3374US2025151367A1Bottom-up metal gate for stacked device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3474US2025031429A1Semiconductor structure with conductive carbon layer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3574US2025275195A1Manufacturing method of semiconductor device having isolation structure formed of low-k dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3674US2025351536A1Selective epitaxy process for the formation of cfet local interconnectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3774US2025318250A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3873US2024395627A1Graphene layer for low resistance contacts and damascene interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3973US2024387645A1Contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4072US12484253B2Metal features of a semiconductor device and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
- 4171US2025140642A1Integrated circuit device with thermoelectric coolingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4271US2024395870A12d Channel Transistors With Low Contact ResistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4371US2025095997A1Gate electrode deposition in stacking transistors and structures resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4470US12243915B2Graphene wrap-around contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 4, 2025·0 cites·20 claims
- 4570US12136660B2Semiconductor device, and method for protecting low-k dielectric feature of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 5, 2024·0 cites·20 claims
- 4670US2025194224A1Selective epitaxy process for the formation of cfet local interconnectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4770US2024249943A1N-dipole material for stacked transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4870US2025261432A1Stacked multi-gate device with contact feature and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4970US2025323156A1Ic structure with high thermal conductivity layer on semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5069US12444680B2Interconnect structures with conductive carbon layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·20 claims
Showing the top 50 of 86 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →