Inventor · disambiguated record
Wenxu Xianyu
Also filed as: XIANYU WENXU
75 granted patents·33 pending applications·318 citations·filing 2004–2024
98Inventor score
Files withWUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD49SAMSUNG ELECTRONICS CO LTD44XIANYU WENXU5YIN HUAXIANG5CHO HANS S1
Top patents by PatentIndex Score
108 records- 0196US7575962B2Fin structure and method of manufacturing fin transistor adopting the fin structureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 18, 2009·47 cites·23 claims
- 0295US11817462B2Thin film transistor, array substrate, and method for fabricating array substrateWUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD·Filed 2020·Granted Nov 14, 2023·4 cites·13 claims
- 0395US11698662B2Foldable mechanism and display deviceWUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD·Filed 2020·Granted Jul 11, 2023·5 cites·18 claims
- 0495US7297615B2Si nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 20, 2007·32 cites·16 claims
- 0594US7566364B2Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 28, 2009·28 cites·19 claims
- 0693US8187905B2Method of forming a microlens and a method for manufacturing an image sensorYIN HUAXIANG·Filed 2010·Granted May 29, 2012·9 cites·30 claims
- 0792US7479442B2Method of manufacturing single crystal Si filmSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 20, 2009·25 cites·17 claims
- 0890US7332412B2Structure of strained silicon on insulator and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 19, 2008·11 cites·8 claims
- 0989US12058901B2Display device and vehicleWUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD·Filed 2022·Granted Aug 6, 2024·2 cites·12 claims
- 1088US8309404B2Poly-Si thin film transistor and organic light-emitting display having the sameYIN HUAXIANG·Filed 2011·Granted Nov 13, 2012·8 cites·3 claims
- 1188US7611932B2Method of manufacturing a thin film transistorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 3, 2009·13 cites·16 claims
- 1287US12268050B2Display panelWUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD·Filed 2020·Granted Apr 1, 2025·2 cites·18 claims
- 1386US9000485B2Electrode structures, gallium nitride based semiconductor devices including the same and methods of manufacturing the sameLEE JEONG-YUB·Filed 2012·Granted Apr 7, 2015·9 cites·33 claims
- 1486US7544585B2Structure of strained silicon on insulator and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 9, 2009·7 cites·6 claims
- 1585US11195883B2OLED display device comprising touch sensor, and method for manufacturing sameWUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD·Filed 2019·Granted Dec 7, 2021·2 cites·9 claims
- 1685US7999322B2Poly-Si thin film transistor and organic light-emitting display having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Aug 16, 2011·6 cites·18 claims
- 1785US7859054B2Poly-Si thin film transistor and organic light-emitting display having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 28, 2010·9 cites·5 claims
- 1885US7842994B2Nonvolatile memory transistor having poly-silicon fin, stacked nonvolatile memory device having the transistor, method of fabricating the transistor, and method of fabricating the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 30, 2010·11 cites·15 claims
- 1985US7557411B2Semi-conductor-on-insulator structure, semiconductor devices using the same and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 7, 2009·12 cites·16 claims
- 2084US8405062B2Method of forming poly-si pattern, diode having poly-si pattern, multi-layer cross point resistive memory device having poly-si pattern, and method of manufacturing the diode and the memory deviceYIN HUAXIANG·Filed 2007·Granted Mar 26, 2013·9 cites·12 claims
- 2181US7750424B2Microlens and an image sensor including a microlensSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 6, 2010·4 cites·24 claims
- 2281US7416924B2Organic light emitting display with single crystalline silicon TFT and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 26, 2008·8 cites·14 claims
- 2379US7919777B2Bottom gate thin film transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Apr 5, 2011·5 cites·11 claims
- 2479US7511381B2Thin film transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 31, 2009·5 cites·11 claims
- 2578US8999812B2Graphene devices and methods of manufacturing the sameXIANYU WENXU·Filed 2012·Granted Apr 7, 2015·4 cites·23 claims
- 2677US7662678B2Method of forming a more highly-oriented silicon layer and substrate having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 16, 2010·5 cites·27 claims
- 2774US12284897B2Display panel with organic light-transmissive thin films and manufacturing method thereofWUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD·Filed 2024·Granted Apr 22, 2025·0 cites·14 claims
- 2874US10879498B2OLED display device and manufacturing method thereofWUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD·Filed 2019·Granted Dec 29, 2020·1 cites·9 claims
- 2974US10181497B2Optoelectronic device, and image sensor and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 15, 2019·2 cites·28 claims
- 3074US7772711B2Semiconductor device including single crystal silicon layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 10, 2010·6 cites·22 claims
- 3173US8022408B2Crystalline nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Sep 20, 2011·2 cites·17 claims
- 3273US8021936B2Method of manufacturing thin film transistorSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 20, 2011·3 cites·9 claims
- 3373US2025056887A1Array substrate and display panelWUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD·Filed 2024·Application pending·0 cites
- 3472US7679140B2Structure of strained silicon on insulator and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 16, 2010·2 cites·5 claims
- 3572US7629207B2Bottom gate thin film transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 8, 2009·3 cites·11 claims
- 3669US12389678B2Method for fabricating array substrateWUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·8 claims
- 3768US11877492B2OLED display device including touch sensors and method for manufacturing sameWUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD·Filed 2021·Granted Jan 16, 2024·0 cites·18 claims
- 3868US7723168B2Method of manufacturing a stacked transistor having a polycrystalline Si filmSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 25, 2010·2 cites·17 claims
- 3967US7531240B2Substrate with locally integrated single crystalline silicon layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 12, 2009·3 cites·6 claims
- 4066US10665637B2Complementary metal oxide semiconductor image sensor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 26, 2020·1 cites·27 claims
- 4165US12457883B2Display panel and display deviceWUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD·Filed 2024·Granted Oct 28, 2025·0 cites·20 claims
- 4265US8445332B2Single crystal silicon rod fabrication methods and a single crystal silicon rod structureXIANYU WENXU·Filed 2007·Granted May 21, 2013·2 cites·17 claims
- 4365US7714330B2Si nanowire substrateSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 11, 2010·2 cites·7 claims
- 4463US12148758B2Array substrate and manufacturing method and display panelWUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD·Filed 2021·Granted Nov 19, 2024·0 cites·17 claims
- 4563US7999266B2Semiconductor device including poly-Si and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 16, 2011·2 cites·13 claims
- 4662US2024268203A1Display panelsWUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD·Filed 2023·Application pending·0 cites
- 4761US8508009B2Microlens and an image sensor including a microlensYIN HUAXIANG·Filed 2010·Granted Aug 13, 2013·0 cites·12 claims
- 4860US12048211B2Display panel and display deviceWUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·20 claims
- 4960US11991912B2Display panel and manufacturing method thereofWUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD·Filed 2020·Granted May 21, 2024·0 cites·14 claims
- 5059US12490623B2Display panel and display device including a cathode layer having a plurality of cathode unitsWUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD·Filed 2022·Granted Dec 2, 2025·0 cites·20 claims
Showing the top 50 of 108 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →