Inventor · disambiguated record
Wenxiang Xu
Also filed as: XU WENXIANG
14 granted patents·8 pending applications·10 citations·filing 2019–2024
86Inventor score
Top patents by PatentIndex Score
22 records- 0193US11257831B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Feb 22, 2022·3 cites·20 claims
- 0288US12052871B2Three-dimensional memory and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jul 30, 2024·1 cites·20 claims
- 0387US11211394B2Three-dimensional memory device with source structure and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Dec 28, 2021·3 cites·20 claims
- 0486US11271007B2Three-dimensional memory and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Mar 8, 2022·3 cites·17 claims
- 0582US2024324224A1Three-dimensional memory and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0674US11785772B2Three-dimensional memory device with source structure and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 0771US11653495B2Three-dimensional memory device with source structure and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted May 16, 2023·0 cites·9 claims
- 0869US12035523B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jul 9, 2024·0 cites·7 claims
- 0969US11805650B2Three-dimensional memory device with source structure and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 1068US11792980B2Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Oct 17, 2023·0 cites·20 claims
- 1164US11437398B2Three-dimensional memory device with source structure and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Sep 6, 2022·0 cites·20 claims
- 1263US11411014B2Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Aug 9, 2022·0 cites·20 claims
- 1362US2025151257A1Semiconductor devices and fabrication methods thereof, and memory systemsYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1462US2024365533A1Semiconductor device, fabrication method of semiconductor device and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1559US2025006494A1Patterning methods, semiconductor structures and memoryYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1657US2024032285A1Word-line-pickup structure and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1757US2024349479A1Simplified manufacture of semiconductor memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1856US2024038856A1Semiconductor devices and manufacturing methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1954US11195853B2Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Dec 7, 2021·0 cites·20 claims
- 2054US11127757B2Three-dimensional memory device with source structure and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Sep 21, 2021·0 cites·20 claims
- 2154US11101286B2Three-dimensional memory device with source structure and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Aug 24, 2021·0 cites·20 claims
- 2248US2025071978A1Semiconductor structure, and method for forming semiconductor structureICLEAGUE TECH CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →