Inventor · disambiguated record
Wen-Chun You
Also filed as: YOU WEN-CHUN
34 granted patents·6 pending applications·259 citations·filing 2013–2025
97Inventor score
Top patents by PatentIndex Score
40 records- 0199US10008662B2Perpendicular magnetic tunneling junction (MTJ) for improved magnetoresistive random-access memory (MRAM) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 26, 2018·53 cites·18 claims
- 0299US9172036B2Top electrode blocking layer for RRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 27, 2015·29 cites·20 claims
- 0398US9502466B1Dummy bottom electrode in interconnect to reduce CMP dishingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·81 cites·20 claims
- 0497US9425392B2RRAM cell structure with laterally offset BEVA/TEVATAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 23, 2016·13 cites·20 claims
- 0596US9666790B2Manufacturing techniques and corresponding devices for magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 30, 2017·12 cites·20 claims
- 0694US11653572B2Manufacturing techniques and corresponding devices for magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 16, 2023·2 cites·20 claims
- 0793US9985075B2Dummy bottom electrode in interconnect to reduce CMP dishingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 29, 2018·8 cites·20 claims
- 0892US11075335B2Techniques for MRAM MTJ top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·7 cites·20 claims
- 0992US9780302B2Top electrode for device structures in interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·5 cites·20 claims
- 1092US9112148B2RRAM cell structure with laterally offset BEVA/TEVATAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 18, 2015·6 cites·20 claims
- 1191US10043970B2Determining a characteristic of a monitored layer on an integrated chipTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 7, 2018·7 cites·20 claims
- 1289US10497861B2Manufacturing techniques and corresponding devices for magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 3, 2019·4 cites·20 claims
- 1389US9076522B2Memory cells breakdown protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 7, 2015·12 cites·19 claims
- 1486US9349953B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 24, 2016·6 cites·20 claims
- 1583US10937957B2Manufacturing techniques and corresponding devices for magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 2, 2021·2 cites·20 claims
- 1683US2025359074A1Memory devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1783US2025356898A1Magnetoresistive Random-Access Memory (MRAM) Cell and Method of Operation ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1882US9444045B2Top electrode for device structures in interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 13, 2016·2 cites·20 claims
- 1981US10862029B2Top electrode for device structures in interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·1 cites·20 claims
- 2080US10134807B2Structure and formation method of integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·3 cites·20 claims
- 2179US12279437B2MRAM memory cell layout for minimizing bitcell areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 15, 2025·0 cites·20 claims
- 2279US9368722B2Resistive random access memory and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 14, 2016·3 cites·11 claims
- 2379US2025227939A1Mram memory cell layout for minimizing bitcell areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2475US2025331176A1Memory device with one-time-programmable memory unit and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2574US11723292B2RRAM cell structure with laterally offset BEVA/TEVATAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 8, 2023·0 cites·20 claims
- 2674US10199575B2RRAM cell structure with laterally offset BEVA/TEVATAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 5, 2019·1 cites·20 claims
- 2773US11800724B2MRAM memory cell layout for minimizing bitcell areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·0 cites·20 claims
- 2872US2024339144A1Magnetoresistive Random-Access Memory (MRAM) Cell and Method of Operation ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2970US12426514B2Techniques for MRAM MTJ top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 23, 2025·0 cites·20 claims
- 3070US12426260B2Memory device with one-time programmable memory unit and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 23, 2025·0 cites·20 claims
- 3169US11244983B2MRAM memory cell layout for minimizing bitcell areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 8, 2022·0 cites·20 claims
- 3269US10878928B2One-time-programmable (OTP) implementation using magnetic junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·2 cites·20 claims
- 3366US10510953B2Top electrode for device structures in interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·0 cites·20 claims
- 3465US10868250B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims
- 3565US2025151287A1Memory devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3664US10700275B2RRAM cell structure with laterally offset BEVA/TEVATAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 30, 2020·0 cites·20 claims
- 3763US12476207B2Embedded memory device with reduced plasma-induced damage and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
- 3862US10276790B2Top electrode for device structures in interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·0 cites·20 claims
- 3950US10388868B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 20, 2019·0 cites·20 claims
- 4038US10868234B2Storage device having magnetic tunnel junction cells of different sizes, and method of forming storage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →