Inventor · disambiguated record
Weisheng Zhao
Also filed as: ZHAO WEISHENG
13 granted patents·2 pending applications·10 citations·filing 2012–2025
84Inventor score
Files withUNIV BEIHANG12HEFEI INNOVATION RESEARCH INSTITUTE BEIHANG UNIV1SHINEON ENVIRONMENTS TECH SERVICES CO LTD1ZHAO WEISHENG1
Top patents by PatentIndex Score
15 records- 0181US11170833B2Highly reliable STT-MRAM structure and implementation method thereofUNIV BEIHANG·Filed 2020·Granted Nov 9, 2021·3 cites·9 claims
- 0270US11151439B2Computing in-memory system and method based on skyrmion racetrack memoryHEFEI INNOVATION RESEARCH INSTITUTE BEIHANG UNIV·Filed 2019·Granted Oct 19, 2021·4 cites·12 claims
- 0363US12449618B2Low-loss coplanar waveguide bonding structure and manufacturing method thereofUNIV BEIHANG·Filed 2023·Granted Oct 21, 2025·0 cites·8 claims
- 0454US10020044B2High-density magnetic memory deviceUNIV BEIHANG·Filed 2017·Granted Jul 10, 2018·1 cites·10 claims
- 0552US12432938B2Memory array, memory, preparing method and writing methodUNIV BEIHANG·Filed 2023·Granted Sep 30, 2025·0 cites·8 claims
- 0651US12466749B1Flocculant for treating fracturing flowback fluid and preparation method thereforSHINEON ENVIRONMENTS TECH SERVICES CO LTD·Filed 2025·Granted Nov 11, 2025·0 cites·8 claims
- 0750US10388344B2Data writing method of magnetic memoryUNIV BEIHANG·Filed 2018·Granted Aug 20, 2019·1 cites·4 claims
- 0846US12381543B2Ultrafast electric pulse generation and detection device and use method thereofUNIV BEIHANG·Filed 2023·Granted Aug 5, 2025·0 cites·10 claims
- 0946US11832530B2Multi-bit memory cell, analog-to-digital converter, device and methodUNIV BEIHANG·Filed 2021·Granted Nov 28, 2023·0 cites·10 claims
- 1045US12029135B2Magnetic random-access memory cell, memory and deviceUNIV BEIHANG·Filed 2021·Granted Jul 2, 2024·0 cites·11 claims
- 1136US2020357983A1Magnetic tunnel junction reference layer, magnetic tunnel junctions and magnetic random access memoryUNIV BEIHANG·Filed 2020·Application pending·0 cites
- 1235US9305607B2Logical memory architecture, in particular for MRAM, PCRAM, or RRAMZHAO WEISHENG·Filed 2012·Granted Apr 5, 2016·1 cites·27 claims
- 1334US2019035447A1Magnetic tunnel junction with TMR enhancementUNIV BEIHANG·Filed 2018·Application pending·0 cites
- 1433US11991933B2Magnetic random-access memoryUNIV BEIHANG·Filed 2021·Granted May 21, 2024·0 cites·6 claims
- 1531US10910029B2Complementary magnetic memory cellUNIV BEIHANG·Filed 2018·Granted Feb 2, 2021·0 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →