Inventor · disambiguated record
William Alan Doolittle
Also filed as: DOOLITTLE WILLIAM · DOOLITTLE WILLIAM A · DOOLITTLE WILLIAM ALAN
9 granted patents·6 pending applications·37 citations·filing 1993–2023
84Inventor score
Files withGEORGIA TECH RES INST8BARNETT ALLEN M2BRILLIANT LIGHT POWER INC2INNOVATIVE ADVANCED MAT INC2MOSELEY MICHAEL WILLIAM1
Top patents by PatentIndex Score
15 records- 0184US10266962B2Deposition systems including effusion sources, and related methodsINNOVATIVE ADVANCED MAT INC·Filed 2017·Granted Apr 23, 2019·2 cites·20 claims
- 0266US7888669B2Nitride/zinc oxide based light-emitting diodesGEORGIA TECH RES INST·Filed 2008·Granted Feb 15, 2011·4 cites·18 claims
- 0365US9142413B2Methods for growing a non-phase separated group-III nitride semiconductor alloyMOSELEY MICHAEL WILLIAM·Filed 2011·Granted Sep 22, 2015·3 cites·21 claims
- 0465US2022165901A1Extreme and deep ultraviolet photovoltaic cellBRILLIANT LIGHT POWER INC·Filed 2022·Application pending·0 cites
- 0561US10526723B2System and method for increasing III-nitride semiconductor growth rate and reducing damaging ion fluxGEORGIA TECH RES INST·Filed 2016·Granted Jan 7, 2020·1 cites·32 claims
- 0660US10329688B2Effusion cells, deposition systems including effusion cells, and related methodsINNOVATIVE ADVANCED MAT INC·Filed 2017·Granted Jun 25, 2019·0 cites·20 claims
- 0760US5521839ADeep level transient spectroscopy (DLTS) system and methodGEORGIA TECH RES INST·Filed 1993·Granted May 28, 1996·21 cites·19 claims
- 0860US2011061726A1High efficiency solar cellBARNETT ALLEN M·Filed 2010·Application pending·0 cites
- 0960US2009314332A1High efficiency solar cellBARNETT ALLEN M·Filed 2009·Application pending·0 cites
- 1057US11319644B2System and method for increasing group III-nitride semiconductor growth rate and reducing damaging ion fluxGEORGIA TECH RES INST·Filed 2020·Granted May 3, 2022·0 cites·24 claims
- 1156US7173286B2Semiconductor devices formed of III-nitride compounds, lithium-niobate-tantalate, and silicon carbideGEORGIA TECH RES INST·Filed 2003·Granted Feb 6, 2007·6 cites·15 claims
- 1252US2025113507A1Aluminum nitride-based high power devices and methods of making the sameGEORGIA TECH RES INST·Filed 2023·Application pending·0 cites
- 1349US2019348563A1Extreme and deep ultraviolet photovoltaic cellBRILLIANT LIGHT POWER INC·Filed 2018·Application pending·0 cites
- 1447US10000381B2Systems and methods for growing a non-phase separated group-III nitride semiconductor alloyGEORGIA TECH RES INST·Filed 2015·Granted Jun 19, 2018·0 cites·13 claims
- 1532US2016010221A1Lithium niobite compositions, syntheses, devices, and structuresGEORGIA TECH RES INST·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →