Inventor · disambiguated record
Willman Tsai
Also filed as: TSAI WILLMAN
6 granted patents·82 citations·filing 2008–2016
85Inventor score
Technology areasH10D
Top patents by PatentIndex Score
6 records- 0196US7947971B2Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsINTEL CORP·Filed 2010·Granted May 24, 2011·24 cites·10 claims
- 0295US7759142B1Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsINTEL CORP·Filed 2008·Granted Jul 20, 2010·29 cites·17 claims
- 0394US10084058B2Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drainsINTEL CORP·Filed 2016·Granted Sep 25, 2018·7 cites·14 claims
- 0494US8258498B2Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsMAJHI PRASHANT·Filed 2011·Granted Sep 4, 2012·15 cites·17 claims
- 0589US8501508B2Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drainsMAJHI PRASHANT·Filed 2012·Granted Aug 6, 2013·7 cites·25 claims
- 0655US9443936B2Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drainsMAJHI PRASHANT·Filed 2013·Granted Sep 13, 2016·0 cites·11 claims
Join the waitlist — get patent alerts
Get an alert when Willman Tsai files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →