Inventor · disambiguated record
Wilman Tsai
Also filed as: TSAI WILMAN
56 granted patents·5 pending applications·682 citations·filing 1990–2024
98Inventor score
Top patents by PatentIndex Score
61 records- 0196US7928426B2Forming a non-planar transistor having a quantum well channelINTEL CORP·Filed 2007·Granted Apr 19, 2011·23 cites·11 claims
- 0295US7435987B1Forming a type I heterostructure in a group IV semiconductorINTEL CORP·Filed 2007·Granted Oct 14, 2008·34 cites·14 claims
- 0395US6458495B1Transmission and phase balance for phase-shifting maskINTEL CORP·Filed 2000·Granted Oct 1, 2002·80 cites·26 claims
- 0493US10937783B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 2, 2021·6 cites·20 claims
- 0592US11456100B2MRAM stacks, MRAM devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·2 cites·20 claims
- 0692US8936976B2Conductivity improvements for III-V semiconductor devicesRADOSAVLJEVIC MARKO·Filed 2009·Granted Jan 20, 2015·16 cites·20 claims
- 0792US8237153B2Forming a non-planar transistor having a quantum well channelCHUI CHI ON·Filed 2011·Granted Aug 7, 2012·12 cites·12 claims
- 0891US8026509B2Tunnel field effect transistor and method of manufacturing sameINTEL CORP·Filed 2008·Granted Sep 27, 2011·16 cites·25 claims
- 0991US7777282B2Self-aligned tunneling pocket in field-effect transistors and processes to form sameINTEL CORP·Filed 2008·Granted Aug 17, 2010·17 cites·31 claims
- 1091US7208366B2Bonding gate oxide with high-k additivesINTEL CORP·Filed 2004·Granted Apr 24, 2007·54 cites·4 claims
- 1191US5160544AHot filament chemical vapor deposition reactorDIAMONEX INC·Filed 1990·Granted Nov 3, 1992·108 cites·28 claims
- 1290US11437434B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·2 cites·20 claims
- 1390US10515857B2Method for manufacturing semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·4 cites·20 claims
- 1490US7629603B2Strain-inducing semiconductor regionsINTEL CORP·Filed 2006·Granted Dec 8, 2009·18 cites·22 claims
- 1590US5126206ADiamond-on-a-substrate for electronic applicationsDIAMONEX INC·Filed 1990·Granted Jun 30, 1992·85 cites·25 claims
- 1689US10056498B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 21, 2018·4 cites·20 claims
- 1788US10868132B2Semiconductor device including standard cells with header/footer switch including negative capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 15, 2020·4 cites·20 claims
- 1887US12334238B2MRAM stacks, MRAM devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 1987US11728332B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·1 cites·20 claims
- 2087US10516061B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·3 cites·20 claims
- 2185US11107919B2Method of manufacturing semiconductor device including ferroelectric layer having columnar-shaped crystalsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 31, 2021·3 cites·20 claims
- 2285US2024387090A1Mram stacks, mram devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2384US5186973AHFCVD method for producing thick, adherent and coherent polycrystalline diamonds filmsDIAMONEX INC·Filed 1990·Granted Feb 16, 1993·57 cites·13 claims
- 2483US11043489B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 22, 2021·2 cites·20 claims
- 2582US9899505B2Conductivity improvements for III-V semiconductor devicesINTEL CORP·Filed 2015·Granted Feb 20, 2018·3 cites·14 claims
- 2681US12211836B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·14 claims
- 2781US11862373B2MRAM stacks and memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·0 cites·19 claims
- 2881US10879307B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·3 cites·20 claims
- 2980US5627105APlasma etch process and TiSix layers made using the processVARIAN ASSOCIATES·Filed 1993·Granted May 6, 1997·48 cites·8 claims
- 3079US12114510B2SOT MRAM having dielectric interfacial layer and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 3176US10431696B2Structure and formation method of semiconductor device structure with nanowireTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 1, 2019·1 cites·20 claims
- 3275US6485869B2Photomask frame modification to eliminate process induced critical dimension control variationINTEL CORP·Filed 1999·Granted Nov 26, 2002·31 cites·49 claims
- 3374US11862732B2Method for forming semiconductor device structure with nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·0 cites·20 claims
- 3474US2024379848A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3573US11963366B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 3673US11430699B2Method of manufacturing semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·0 cites·20 claims
- 3773US7763511B2Dielectric barrier for nanocrystalsINTEL CORP·Filed 2006·Granted Jul 27, 2010·5 cites·21 claims
- 3867US12148829B2Method of manufacturing semiconductor device including ferroelectric layer having nano crystalsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 19, 2024·0 cites·20 claims
- 3966US10872822B2Method for manufacturing semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 22, 2020·0 cites·20 claims
- 4065US11107931B2Structure and formation method of semiconductor device structure with nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·0 cites·20 claims
- 4164US11469267B2SOT MRAM having dielectric interfacial layer and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 11, 2022·0 cites·20 claims
- 4264US6692878B2Photomask frame modification to eliminate process induced critical dimension control variationINTEL CORP·Filed 2002·Granted Feb 17, 2004·7 cites·10 claims
- 4363US11398567B2Semiconductor device with negative capacitance comprising ferroelectric layer including amorphous and crystalsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 26, 2022·0 cites·20 claims
- 4462US10355112B2Forming a non-planar transistor having a quantum well channelINTEL CORP·Filed 2017·Granted Jul 16, 2019·0 cites·15 claims
- 4562US9806180B2Forming a non-planar transistor having a quantum well channelINTEL CORP·Filed 2014·Granted Oct 31, 2017·0 cites·12 claims
- 4659US11114540B2Semiconductor device including standard cells with header/footer switch including negative capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 7, 2021·0 cites·20 claims
- 4759US7834426B2High-k dual dielectric stackINTEL CORP·Filed 2007·Granted Nov 16, 2010·1 cites·14 claims
- 4858US12166098B2Cerium-doped ferroelectric materials and related devices and methodsUNIV LELAND STANFORD JUNIOR·Filed 2021·Granted Dec 10, 2024·0 cites·16 claims
- 4957US8900946B2Method of forming layers using atomic layer depositionMICRON TECHNOLOGY INC·Filed 2014·Granted Dec 2, 2014·0 cites·21 claims
- 5057US7928468B2Buffer structure for semiconductor device and methods of fabricationINTEL CORP·Filed 2008·Granted Apr 19, 2011·0 cites·7 claims
Showing the top 50 of 61 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →