Inventor · disambiguated record
Won-Il Bae
Also filed as: BAE WON-IL
12 granted patents·50 citations·filing 1999–2017
87Inventor score
Top patents by PatentIndex Score
12 records- 0179US10229900B2Semiconductor memory device including stacked chips and memory module having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 12, 2019·3 cites·20 claims
- 0277US6201745B1Semiconductor memory device with redundant row substitution architecture and a method of driving a row thereofSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Mar 13, 2001·28 cites·11 claims
- 0368US9589674B2Method of operating memory device and methods of writing and reading data in memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 7, 2017·3 cites·17 claims
- 0463US8307318B2Method of configuring a semiconductor integrated circuit involving capacitors having a width equal to the length of active resistorsKIM SUNG-HOON·Filed 2009·Granted Nov 6, 2012·2 cites·20 claims
- 0560US9171605B1Concentrated address detecting method of semiconductor device and concentrated address detecting circuit using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 27, 2015·1 cites·22 claims
- 0645US6310813B1Methods and apparatus for bypassing refreshing of selected portions of DRAM devicesSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Oct 30, 2001·10 cites·26 claims
- 0740US6927488B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 9, 2005·2 cites·15 claims
- 0839US8010765B2Semiconductor memory device and method for controlling clock latency according to reordering of burst dataSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 30, 2011·0 cites·16 claims
- 0937US10423483B2Semiconductor memory device and method for controlling write timing of parity dataSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Sep 24, 2019·0 cites·18 claims
- 1037US6529432B2Semiconductor memory device and data read method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 4, 2003·1 cites·20 claims
- 1136US7408817B2Voltage generating circuit, semiconductor memory device comprising the same, and voltage generating methodSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 5, 2008·0 cites·19 claims
- 1235US7580294B2Semiconductor memory device comprising two rows of padsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 25, 2009·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →