Inventor · disambiguated record
Wolfgang Bergner
Also filed as: BERGNER WOLFGANG · BERGNER WOLFGANG WILHELM KARL
46 granted patents·11 pending applications·430 citations·filing 1996–2025
98Inventor score
Top patents by PatentIndex Score
57 records- 0198US9478655B2Semiconductor device having a lower diode region arranged below a trenchINFINEON TECHNOLOGIES AG·Filed 2015·Granted Oct 25, 2016·28 cites·30 claims
- 0297US9837527B2Semiconductor device with a trench electrodeINFINEON TECHNOLOGIES AG·Filed 2015·Granted Dec 5, 2017·22 cites·28 claims
- 0396US9577073B2Method of forming a silicon-carbide device with a shielded gateINFINEON TECHNOLOGIES AG·Filed 2014·Granted Feb 21, 2017·19 cites·18 claims
- 0494US10700192B2Semiconductor device having a source electrode contact trenchINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jun 30, 2020·7 cites·20 claims
- 0594US10211306B2Semiconductor device with diode region and trench gate structureINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 19, 2019·15 cites·21 claims
- 0694US6573137B1Single sided buried strapINFINEON TECHNOLOGIES CORP·Filed 2000·Granted Jun 3, 2003·58 cites·12 claims
- 0793US10586845B1SiC trench transistor device and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2018·Granted Mar 10, 2020·9 cites·25 claims
- 0891US10038087B2Semiconductor device and transistor cell having a diode regionINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 31, 2018·4 cites·20 claims
- 0990US10818749B2Semiconductor devices and a circuit for controlling a field effect transistor of a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 27, 2020·6 cites·11 claims
- 1088US6593612B2Structure and method for forming a body contact for vertical transistor cellsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Jul 15, 2003·37 cites·4 claims
- 1187US10727330B2Semiconductor device with diode regionINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 28, 2020·2 cites·20 claims
- 1285US9960243B2Semiconductor device with stripe-shaped trench gate structures and gate connector structureINFINEON TECHNOLOGIES AG·Filed 2016·Granted May 1, 2018·3 cites·19 claims
- 1384US9876103B2Semiconductor device and transistor cell having a diode regionINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jan 23, 2018·2 cites·20 claims
- 1484US6509624B1Semiconductor fuses and antifuses in vertical DRAMSIBM·Filed 2000·Granted Jan 21, 2003·37 cites·11 claims
- 1582US7301192B2Dram cell pair and dram memory cell arrayINFINEON TECHNOLOGIES AG·Filed 2005·Granted Nov 27, 2007·11 cites·19 claims
- 1681US11063142B2Semiconductor device including silicon carbide body and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 13, 2021·2 cites·20 claims
- 1780US2025275203A1Method for producing a silicon carbide semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 1879US11043560B2Silicon carbide semiconductor component comprising trench gate structures and shielding regionsINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jun 22, 2021·1 cites·22 claims
- 1979US10700182B2Semiconductor device with transistor cells and a drift structure and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jun 30, 2020·2 cites·26 claims
- 2079US9530850B2Semiconductor device with stripe-shaped trench gate structures and gate connector structureINFINEON TECHNOLOGIES AG·Filed 2015·Granted Dec 27, 2016·2 cites·21 claims
- 2178US12324203B2Method for producing a silicon carbide semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2023·Granted Jun 3, 2025·0 cites·17 claims
- 2278US10217636B2Method of manufacturing a silicon carbide semiconductor device by removing amorphized portionsINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 26, 2019·2 cites·17 claims
- 2378US6080618AControllability of a buried device layerSIEMENS AG·Filed 1998·Granted Jun 27, 2000·37 cites·26 claims
- 2475US11855147B2Method for producing a silicon carbide semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 2573US9960230B2Silicon-carbide transistor device with a shielded gateINFINEON TECHNOLOGIES AG·Filed 2017·Granted May 1, 2018·1 cites·20 claims
- 2673US9257511B2Silicon carbide device and a method for forming a silicon carbide deviceINFINEON TECHNOLOGIES AG·Filed 2013·Granted Feb 9, 2016·2 cites·18 claims
- 2771US10886370B2Semiconductor device including silicon carbide body and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jan 5, 2021·2 cites·15 claims
- 2869US11462611B2SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2020·Granted Oct 4, 2022·0 cites·15 claims
- 2968US11626477B2Silicon carbide field-effect transistor including shielding areasINFINEON TECHNOLOGIES AG·Filed 2021·Granted Apr 11, 2023·0 cites·23 claims
- 3068US6667504B1Self-aligned buried strap process using doped HDP oxideIBM·Filed 2003·Granted Dec 23, 2003·11 cites·11 claims
- 3166US10896952B2SiC device and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 19, 2021·0 cites·16 claims
- 3264US6927172B2Process to suppress lithography at a wafer edgeINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 9, 2005·10 cites·18 claims
- 3363US2018315845A1Semiconductor Device and Transistor Cell Having a Diode RegionINFINEON TECHNOLOGIES AG·Filed 2018·Application pending·0 cites
- 3462US11842938B2Semiconductor device and method for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2021·Granted Dec 12, 2023·0 cites·18 claims
- 3561US6686668B2Structure and method of forming bitline contacts for a vertical DRAM array using a line bitline contact maskIBM·Filed 2001·Granted Feb 3, 2004·8 cites·5 claims
- 3661US2025022918A1Semiconductor die with a silicon carbide substrateINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 3761US2025015148A1Transistor deviceINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 3860US11101343B2Silicon carbide field-effect transistor including shielding areasINFINEON TECHNOLOGIES AG·Filed 2019·Granted Aug 24, 2021·0 cites·20 claims
- 3959US2025107202A1Transistor DeviceINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 4057US6699794B1Self aligned buried plateSIEMENS AG·Filed 1998·Granted Mar 2, 2004·17 cites·16 claims
- 4157US5935873ADeposition of carbon into nitride layer for improved selectivity of oxide to nitride etchrate for self aligned contact etchingSIEMENS AG·Filed 1997·Granted Aug 10, 1999·21 cites·22 claims
- 4256US2018248000A1Vertical Transistor Device with a Variable Gate Dielectric ThicknessINFINEON TECHNOLOGIES AG·Filed 2018·Application pending·0 cites
- 4355US6946345B2Self-aligned buried strap process using doped HDP oxideIBM·Filed 2003·Granted Sep 20, 2005·5 cites·9 claims
- 4455US2018053841A1Semiconductor Device with a Source Trench ElectrodeINFINEON TECHNOLOGIES AG·Filed 2017·Application pending·0 cites
- 4555US2025338550A1SEMICONDUCTOR DEVICE INCLUDING A SiC SEMICONDUCTOR BODYINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 4654US11133378B2Semiconductor device including trench contact structure and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2020·Granted Sep 28, 2021·0 cites·17 claims
- 4753US11417747B2Transistor device with a varying gate runner resistivity per areaINFINEON TECHNOLOGIES AG·Filed 2020·Granted Aug 16, 2022·0 cites·20 claims
- 4852US9496346B2Silicon carbide device and a method for forming a silicon carbide deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Nov 15, 2016·0 cites·16 claims
- 4952US2025246433A1Method of forming a wide band gap semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 5051US11217500B2Semiconductor device and method for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jan 4, 2022·0 cites·26 claims
Showing the top 50 of 57 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →