Inventor · disambiguated record
Won-Ju Cho
Also filed as: CHO WON J · CHO WON-JU
15 granted patents·5 pending applications·152 citations·filing 1995–2017
92Inventor score
Files withKOREA ELECTRONICS TELECOMM8LG SEMICON CO LTD6CMTECH21 CO LTD1HYUNDAI ELECTRONICS IND1KOREA INST SCI & TECH1
Top patents by PatentIndex Score
20 records- 0189US7060580B2Field effect transistor and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2005·Granted Jun 13, 2006·14 cites·6 claims
- 0277US6723587B2Ultra small-sized SOI MOSFET and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2002·Granted Apr 20, 2004·24 cites·7 claims
- 0369US5981993AFlash memory device and method of fabricating the sameLG SEMICON CO LTD·Filed 1997·Granted Nov 9, 1999·30 cites·24 claims
- 0465US6620668B2Method of fabricating MOS transistor having shallow source/drain junction regionsKOREA ELECTRONICS TELECOMM·Filed 2002·Granted Sep 16, 2003·10 cites·28 claims
- 0560US5753544ACrystallization process and method of manufacturing thin film transistor using sameLG SEMICON CO LTD·Filed 1995·Granted May 19, 1998·26 cites·18 claims
- 0659US9846166B2Biosensor using cell that expresses chemosensory receptor that can detect sugar, and alzheimer's disease diagnostic apparatus comprising sameKYUNGPOOK NATIONAL UNIV INDUSTRY-ACADEMIC COOPERATION FOUNDATION·Filed 2013·Granted Dec 19, 2017·1 cites·8 claims
- 0759US6693294B1Schottky barrier tunnel transistor using thin silicon layer on insulator and method for fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2002·Granted Feb 17, 2004·8 cites·15 claims
- 0850US7750378B2Field effect transistor and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Jul 6, 2010·0 cites·9 claims
- 0946US5994729ADRAM cell and method of fabricating the sameLG SEMICON CO LTD·Filed 1997·Granted Nov 30, 1999·9 cites·11 claims
- 1046US5840601AThin film transistor and method for making sameLG SEMICON CO LTD·Filed 1996·Granted Nov 24, 1998·10 cites·19 claims
- 1141US6143669AMethod of growing gate oxidesHYUNDAI ELECTRONICS IND·Filed 1998·Granted Nov 7, 2000·9 cites·14 claims
- 1241US5849619AMethod for formation of capacitorsLG SEMICON CO LTD·Filed 1996·Granted Dec 15, 1998·8 cites·13 claims
- 1341US2006121661A1Non-volatile memory device using mobile ionic charge and method of manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2005·Application pending·0 cites
- 1438US2006125041A1Transistor using impact ionization and method of manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2005·Application pending·0 cites
- 1537US6797629B2Method of manufacturing nano transistorsKOREA ELECTRONICS TELECOMM·Filed 2002·Granted Sep 28, 2004·0 cites·11 claims
- 1636US2003082922A1Method of fabricating integrated circuit having shallow junctionFiled 2001·Application pending·0 cites
- 1734US6117724ADRAM cell and method of fabricating the sameLG SEMICON CO LTD·Filed 1999·Granted Sep 12, 2000·3 cites·15 claims
- 1834US2016202208A1Multiplexing detection system of dual gate ion-sensitive field-effect transistor sensorKOREA INST SCI & TECH·Filed 2015·Application pending·0 cites
- 1924US10283367B2Hydrogenation annealing method using microwaveCMTECH21 CO LTD·Filed 2017·Granted May 7, 2019·0 cites·7 claims
- 2023US2001006039A1Method for manufacturing an epitaxial silicon waferFiled 2000·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →