Inventor · disambiguated record
Wolfgang Hoenlein
Also filed as: HOENLEIN WOLFGANG
17 granted patents·3 pending applications·433 citations·filing 1991–2012
94Inventor score
Files withSIEMENS AG10ADVANCED TECH MATERIALS3INFINEON TECHNOLOGIES AG3BEITEL GERHARD1ENDERS GERHARD1
Top patents by PatentIndex Score
20 records- 0192US5494832AMethod for manufacturing a solar cell from a substrate waferSIEMENS AG·Filed 1994·Granted Feb 27, 1996·102 cites·17 claims
- 0282US7005303B2Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devicesADVANCED TECH MATERIALS·Filed 2004·Granted Feb 28, 2006·27 cites·12 claims
- 0377US6730523B2Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devicesADVANCED TECH MATERIALS·Filed 2001·Granted May 4, 2004·17 cites·47 claims
- 0476US5529950AMethod for manufacturing a cubically integrated circuit arrangementSIEMENS AG·Filed 1995·Granted Jun 25, 1996·53 cites·20 claims
- 0574US5188977AMethod for manufacturing an electrically conductive tip composed of a doped semiconductor materialSIEMENS AG·Filed 1991·Granted Feb 23, 1993·59 cites·11 claims
- 0668US5306647AMethod for manufacturing a solar cell from a substrate waferSIEMENS AG·Filed 1992·Granted Apr 26, 1994·42 cites·20 claims
- 0766US6303391B1Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devicesADVANCED TECH MATERIALS·Filed 1997·Granted Oct 16, 2001·27 cites·14 claims
- 0862US5360759AMethod for manufacturing a component with porous siliconSIEMENS AG·Filed 1993·Granted Nov 1, 1994·34 cites·9 claims
- 0960US8492844B2Fully depleted SOI device with buried doped layerENDERS GERHARD·Filed 2011·Granted Jul 23, 2013·2 cites·23 claims
- 1060US5759903ACircuit structure having at least one capacitor and a method for the manufacture thereofSIEMENS AG·Filed 1995·Granted Jun 2, 1998·28 cites·12 claims
- 1154US6022786AMethod for manufacturing a capacitor for a semiconductor arrangementSIEMENS AG·Filed 1998·Granted Feb 8, 2000·15 cites·13 claims
- 1254US5989972ACapacitor in a semiconductor configuration and process for its productionSIEMENS AG·Filed 1996·Granted Nov 23, 1999·13 cites·21 claims
- 1349US6455328B2Method of manufacture of a capacitor with a dielectric on the basis of strontium-bismuth-tantalumINFINEON TECHNOLOGIES AG·Filed 2001·Granted Sep 24, 2002·2 cites·6 claims
- 1443US6466152B2Resistor cascade for forming electrical reference quantities and analog/digital converterINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 15, 2002·0 cites·6 claims
- 1542US5365405AMulti-chip moduleSIEMENS AG·Filed 1993·Granted Nov 15, 1994·12 cites·16 claims
- 1642US2007216030A1Integrated circuit having a multilayer capacitance arrangementINFINEON TECHNOLOGIES AG·Filed 2007·Application pending·0 cites
- 1736US9251871B2Sense amplifier with dual gate precharge and decode transistorsSOITEC SILICON ON INSULATOR·Filed 2012·Granted Feb 2, 2016·0 cites·14 claims
- 1836US2002125470A1Multiwall nanotube and process for oxidizing only the outer wall of a multiwall nanotubeFiled 2001·Application pending·0 cites
- 1934US2009011556A9Method for producing a microelectronic structureBEITEL GERHARD·Filed 2001·Application pending·0 cites
- 2030US5449310AMethod for manufacturing rod-shaped silicon structuresSIEMENS AG·Filed 1994·Granted Sep 12, 1995·0 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →