Inventor · disambiguated record
Wonhyuk Hong
Also filed as: HONG WONHYUK
9 granted patents·21 pending applications·3 citations·filing 2020–2025
77Inventor score
Files withSAMSUNG ELECTRONICS CO LTD30
Top patents by PatentIndex Score
30 records- 0193US11270944B2Semiconductor device having interconnection lines with different linewidths and metal patternsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 8, 2022·3 cites·20 claims
- 0278US12087669B1Integrated circuit devices including discharging path and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 10, 2024·0 cites·16 claims
- 0373US2025063825A1Integrated circuit devices including discharging path and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0470US12255248B2Semiconductor device including backside contact structure having positive slope and method of forming thereofSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·9 claims
- 0569US12199038B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
- 0668US12490491B2Integrated circuit devices including a back side power distribution network structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 2, 2025·0 cites·15 claims
- 0764US12463136B2Integrated circuit devices including backside power rail and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 4, 2025·0 cites·16 claims
- 0863US12199042B2Semiconductor device having interconnection lines with different linewidths and metal patternsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·14 claims
- 0963US11728268B2Semiconductor devices including via structures having a via portion and a barrier portionSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 1063US2025185332A1Semiconductor device including backside contact structure having positive slope and method of forming thereofSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1162US2025062192A1Integrated circuit devices including discharging path and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1259US2025151362A1Semiconductor device including self-aligned backside contact structure and etch stop layerSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1358US2024429130A1Semiconductor device including self-aligned backside contact structureSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1457US2024421154A1Integrated circuit devices including a backside power distribution network structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1557US2024332185A1Integrated circuit devices including a back side power distribution network structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1656US12347774B2Integrated circuit devices including metal lines spaced apart from metal vias, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·18 claims
- 1756US2024363491A1Integrated circuit devices including a back side power distribution network structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1855US2024413213A1Noble formation method of cmos for 3d stacked fet with bspdnSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1955US2024290689A1Semiconductor device including backside contact structureSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2054US2025379143A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2154US2024105615A1Field-effect transistor with uniform source/drain regions on self-aligned direct backside contact structures of backside power distribution network (bspdn)SAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2253US2025022797A1Interconnect structure including metal line and top via formed through different processesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2353US2024079329A1Integrated circuit devices including a back side power distribution network structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2452US2024282670A1Semiconductor device including self-aligned backside contact structure formed based on contact isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2551US2024203793A1Backside contact formation using pillar patterningSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2650US2024079330A1Integrated circuit devices including a back side power distribution network structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2749US2023343839A1Via structure connecting front side structure of semiconductor device to bspdn, and method of manufacturing the same using sacrificial via structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2848US2023326858A1Reversed high aspect ratio contact (harc) structure and processSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2948US2023369111A1Integrated circuit devices including metal structures having a curved interface and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 3047US2023361032A1Wet recess for ru subtractive processSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →