Inventor · disambiguated record
Wolfgang Hönlein
Also filed as: HOENLEIN WOLFGANG · HONLEIN WOLFGANG
16 granted patents·2 pending applications·575 citations·filing 1998–2005
94Inventor score
Files withINFINEON TECHNOLOGIES AG12SIEMENS AG3INFINEON TECHNOLOGIES INC1QIMONDA AG1STEINHOEGL WERNER1
Top patents by PatentIndex Score
18 records- 0198US6798000B2Field effect transistorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Sep 28, 2004·251 cites·24 claims
- 0291US6108191AMultilayer capacitor with high specific capacitance and production process thereforSIEMENS AG·Filed 1998·Granted Aug 22, 2000·141 cites·9 claims
- 0385US6809361B2Magnetic memory unit and magnetic memory arrayINFINEON TECHNOLOGIES AG·Filed 2004·Granted Oct 26, 2004·38 cites·12 claims
- 0477US7301779B2Electronic chip and electronic chip assemblyINFINEON TECHNOLOGIES AG·Filed 2002·Granted Nov 27, 2007·26 cites·9 claims
- 0573US7321097B2Electronic component comprising an electrically conductive connection consisting of carbon nanotubes and a method for producing the sameINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jan 22, 2008·16 cites·10 claims
- 0673US7265376B2Non-volatile memory cell, memory cell arrangement and method for production of a non-volatile memory cellINFINEON TECHNOLOGIES INC·Filed 2003·Granted Sep 4, 2007·19 cites·26 claims
- 0765US7709827B2Vertically integrated field-effect transistor having a nanostructure thereinQIMONDA AG·Filed 2003·Granted May 4, 2010·12 cites·20 claims
- 0860US7413971B2Method of producing a layered arrangement and layered arrangementSTEINHOEGL WERNER·Filed 2002·Granted Aug 19, 2008·13 cites·21 claims
- 0960US6204119B1Manufacturing method for a capacitor in an integrated memory circuitSIEMENS AG·Filed 1999·Granted Mar 20, 2001·19 cites·10 claims
- 1058US6441424B1Integrated circuit configuration having at least one capacitor and method for producing the sameINFINEON TECHNOLOGIES AG·Filed 1998·Granted Aug 27, 2002·15 cites·25 claims
- 1152US6469887B2Capacitor for semiconductor configuration and method for fabricating a dielectric layer thereforINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 22, 2002·3 cites·8 claims
- 1243US2005276093A1Memory cell, memory cell arrangement, patterning arrangement, and method for fabricating a memory cellINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 1342US6894330B2Memory configuration and method for reading a state from and storing a state in a ferroelectric transistorINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 17, 2005·4 cites·8 claims
- 1441US6165835AMethod for producing a silicon capacitorSIEMENS AG·Filed 1998·Granted Dec 26, 2000·9 cites·22 claims
- 1539US6710388B2Ferroelectric transistor, use thereof in a memory cell configuration and method of producing the ferroelectric transistorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 23, 2004·2 cites·16 claims
- 1638US6316802B1Easy to manufacture integrated semiconductor memory configuration with platinum electrodesINFINEON TECHNOLOGIES AG·Filed 1999·Granted Nov 13, 2001·5 cites·9 claims
- 1734US2005224888A1Integrated circuit arrayINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 1832US6944044B2Method for reading out or in a status from or to a ferroelectrical transistor of a memory cell and memory matrixINFINEON TECHNOLOGIES AG·Filed 2001·Granted Sep 13, 2005·2 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →