Inventor · disambiguated record
Woan-Yun Hsiao
Also filed as: HSIAO WOAN-YUN
7 granted patents·1 pending application·2 citations·filing 2015–2025
72Inventor score
Top patents by PatentIndex Score
8 records- 0194US11818887B2Erasable programmable single-poly non-volatile memory cell and associated array structureEMEMORY TECHNOLOGY INC·Filed 2022·Granted Nov 14, 2023·2 cites·13 claims
- 0280US12482526B2Non-volatile memory and reference current generator thereofEMEMORY TECHNOLOGY INC·Filed 2023·Granted Nov 25, 2025·0 cites·26 claims
- 0367US11653503B2Semiconductor structure with data storage structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 16, 2023·0 cites·20 claims
- 0467US2025267863A1Erasable programmable non-volatile memory cellEMEMORY TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0565US11610103B2One time programmable non-volatile memory cell on glass substrateEMEMORY TECHNOLOGY INC·Filed 2021·Granted Mar 21, 2023·0 cites·11 claims
- 0657US10763305B2Semiconductor structure with data storage structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·0 cites·20 claims
- 0753US11751398B2Memory structure and operation method thereofEMEMORY TECHNOLOGY INC·Filed 2021·Granted Sep 5, 2023·0 cites·19 claims
- 0851US10090360B2Method of manufacturing a semiconductor structure including a plurality of trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 2, 2018·0 cites·18 claims
Join the waitlist — get patent alerts
Get an alert when Woan-Yun Hsiao files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →