Inventor · disambiguated record
Wolfgang Jantscher
Also filed as: JANTSCHER WOLFGANG
17 granted patents·2 pending applications·21 citations·filing 2013–2025
89Inventor score
Files withINFINEON TECHNOLOGIES AG10INFINEON TECHNOLOGIES AUSTRIA AG7INFINEON TECH DRESDEN GMBH & CO KG2
Top patents by PatentIndex Score
19 records- 0191US11961904B2Semiconductor device including trench gate structure and buried shielding region and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2021·Granted Apr 16, 2024·2 cites·21 claims
- 0291US9012980B1Method of manufacturing a semiconductor device including proton irradiation and semiconductor device including charge compensation structureINFINEON TECHNOLOGIES AG·Filed 2013·Granted Apr 21, 2015·11 cites·20 claims
- 0389US9653540B2Semiconductor wafer and method of manufacturing semiconductor devices in a semiconductor waferINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted May 16, 2017·5 cites·14 claims
- 0479US12295156B2Semiconductor device including trench gate structure and buried shielding region and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2024·Granted May 6, 2025·0 cites·20 claims
- 0576US2025234588A1Semiconductor device including trench gate structure and buried shielding region and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 0668US12471302B2Silicon carbide device with trench gate structureINFINEON TECHNOLOGIES AG·Filed 2021·Granted Nov 11, 2025·0 cites·10 claims
- 0768US9859361B2SiC-based superjunction semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jan 2, 2018·1 cites·13 claims
- 0868US9773863B2VDMOS having a non-depletable extension zone formed between an active area and side surface of semiconductor bodyINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Sep 26, 2017·2 cites·18 claims
- 0964US11527608B2Method for producing a transistor device having a superjunction structureINFINEON TECH DRESDEN GMBH & CO KG·Filed 2021·Granted Dec 13, 2022·0 cites·22 claims
- 1063US11545561B2Methods for manufacturing a MOSFETINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Jan 3, 2023·0 cites·9 claims
- 1163US11211468B2Silicon carbide device with trench gate structure and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2020·Granted Dec 28, 2021·0 cites·12 claims
- 1256US11876133B2Silicon carbide device with transistor cell and clamp regionINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jan 16, 2024·0 cites·14 claims
- 1356US10971582B2Method for forming a superjunction transistor deviceINFINEON TECH DRESDEN GMBH & CO KG·Filed 2019·Granted Apr 6, 2021·0 cites·22 claims
- 1454US12057473B2Silicon carbide device with transistor cell and clamp regions in a well regionINFINEON TECHNOLOGIES AG·Filed 2021·Granted Aug 6, 2024·0 cites·14 claims
- 1554US10903341B2Methods for manufacturing a MOSFETINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Jan 26, 2021·0 cites·10 claims
- 1653US10541301B2SiC-based superjunction semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 21, 2020·0 cites·14 claims
- 1752US10269896B2Semiconductor wafer and method of manufacturing semiconductor devices in a semiconductor waferINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Apr 23, 2019·0 cites·5 claims
- 1847US2017373140A1Semiconductor Device with Field Dielectric in an Edge AreaINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Application pending·0 cites
- 1942US10347491B2Forming recombination centers in a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Jul 9, 2019·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →