Inventor · disambiguated record
Woochul Jeon
Also filed as: JEON WOOCHUL
31 granted patents·4 pending applications·44 citations·filing 2011–2024
95Inventor score
Files withSEMICONDUCTOR COMPONENTS IND LLC20SAMSUNG ELECTRONICS CO LTD6SEMICONDUCTOR COMPONENTS IND3JEON WOOCHUL2PARK YOUNGHWAN2
Top patents by PatentIndex Score
35 records- 0190US11769807B2Lateral transistor with extended source finger contactSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted Sep 26, 2023·2 cites·20 claims
- 0288US12199174B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 14, 2025·1 cites·20 claims
- 0388US9842920B1Gallium nitride semiconductor device with isolated fingersSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Dec 12, 2017·6 cites·13 claims
- 0487US10749019B2Circuit and electronic device including an enhancement-mode transistorSEMICONDUCTOR COMPONENTS IND·Filed 2018·Granted Aug 18, 2020·4 cites·17 claims
- 0586US10937781B1Electronic device including a protection circuitSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Mar 2, 2021·6 cites·20 claims
- 0686US10741682B2High-electron-mobility transistor (HEMT) semiconductor devices with reduced dynamic resistanceSEMICONDUCTOR COMPONENTS IND·Filed 2017·Granted Aug 11, 2020·5 cites·16 claims
- 0781US10312359B2Guard rings for cascode gallium nitride devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Jun 4, 2019·2 cites·20 claims
- 0881US8735941B2Nitride based semiconductor device and method for manufacturing the samePARK KIYEOL·Filed 2011·Granted May 27, 2014·9 cites·5 claims
- 0975US2025098201A1High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1073US9754931B2Circuit and an integrated circuit including a transistor and another component coupled theretoSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Sep 5, 2017·2 cites·20 claims
- 1172US12464793B2Nitride semiconductor buffer structure and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 1271US10797153B2Process of forming an electronic device including an access regionSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Oct 6, 2020·1 cites·20 claims
- 1371US9947654B2Electronic device including a transistor and a field electrodeSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Apr 17, 2018·1 cites·10 claims
- 1469US10069002B2Bond-over-active circuity gallium nitride devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Sep 4, 2018·1 cites·19 claims
- 1567US10854718B2Method of forming a semiconductor deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Dec 1, 2020·1 cites·20 claims
- 1665US8614464B2Nitride-based semiconductor device and method for manufacturing the sameJEON WOOCHUL·Filed 2011·Granted Dec 24, 2013·3 cites·8 claims
- 1762US10978581B2Guard rings for cascode gallium nitride devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Apr 13, 2021·0 cites·19 claims
- 1862US10741653B2Bond-over-active circuity gallium nitride devicesSEMICONDUCTOR COMPONENTS IND·Filed 2019·Granted Aug 11, 2020·0 cites·18 claims
- 1962US10707203B2Cascode semiconductor device structure and method thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Jul 7, 2020·0 cites·20 claims
- 2061US11538931B2High-electron-mobility transistor (HEMT) semiconductor devices with reduced dynamic resistanceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted Dec 27, 2022·0 cites·19 claims
- 2159US12426294B2High electron mobility transistorSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 2259US10431525B2Bond-over-active circuity gallium nitride devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Oct 1, 2019·0 cites·10 claims
- 2358US12113110B2Nitride semiconductor device with field effect gateSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 8, 2024·0 cites·20 claims
- 2458US10217737B2Cascode semiconductor device structure and method thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Feb 26, 2019·0 cites·12 claims
- 2557US10559678B2Cascode circuit having a gate of a low-side transistor coupled to a high-side transistorSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Feb 11, 2020·0 cites·13 claims
- 2656US9966462B2Guard rings for cascode gallium nitride devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted May 8, 2018·0 cites·10 claims
- 2755US9741711B2Cascode semiconductor device structure and method thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Aug 22, 2017·0 cites·11 claims
- 2850US10811514B2Electronic device including an enhancement-mode HEMT and a method of using the sameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Oct 20, 2020·0 cites·20 claims
- 2949US12317536B2Semiconductor device and power switching system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 27, 2025·0 cites·19 claims
- 3047US2014227836A1Nitride based semiconductor device and method for manufacturing the sameSAMSUNG ELECTRO MECH·Filed 2014·Application pending·0 cites
- 3145US9985022B2Electronic device including a cascode circuit having principal drive and bypass transistorsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted May 29, 2018·0 cites·17 claims
- 3233US8445891B2Nitride based semiconductor device and method for manufacturing the sameJEON WOOCHUL·Filed 2011·Granted May 21, 2013·0 cites·8 claims
- 3333US2016336313A1Integrated circuit including a diode and transistors in a cascode configurationSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Application pending·0 cites
- 3431US8450826B2Nitride based semiconductor devicePARK YOUNGHWAN·Filed 2011·Granted May 28, 2013·0 cites·16 claims
- 3527US2012146094A1Nitride based semiconductor devicePARK YOUNGHWAN·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →