Inventor · disambiguated record
Wook-Hyun Kwon
Also filed as: KWON WOOK HYUN
18 granted patents·4 pending applications·128 citations·filing 1999–2025
93Inventor score
Files withSAMSUNG ELECTRONICS CO LTD13HYUNDAI ELECTRONICS IND6HYNIX SEMICONDUCTOR INC1KIM DAE-MANN1KWON WOOK HYUN1
Top patents by PatentIndex Score
22 records- 0186US7468924B2Non-volatile memory device capable of reducing threshold voltage distributionSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 23, 2008·18 cites·20 claims
- 0282US9564340B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Feb 7, 2017·5 cites·20 claims
- 0378US7586135B2Multilevel integrated circuit devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 8, 2009·7 cites·21 claims
- 0478US7338860B2Methods of forming non-volatile memory device having floating gateSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 4, 2008·8 cites·14 claims
- 0577US2025324651A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0670US7547943B2Non-volatile memory devices that include a selection transistor having a recessed channel and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 16, 2009·15 cites·10 claims
- 0770US6313501B1Nonvolatile memory, cell array thereof, and method for sensing data therefromHYUNDAI ELECTRONICS IND·Filed 2000·Granted Nov 6, 2001·14 cites·2 claims
- 0867US6849506B2Non-volatile memory device and fabrication methodHYUNDAI ELECTRONICS IND·Filed 2003·Granted Feb 1, 2005·13 cites·11 claims
- 0965US12376327B2Field-effect transistors including a lower insulating layerSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 29, 2025·0 cites·20 claims
- 1064US7928501B2Semiconductor device and methods of forming and operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Apr 19, 2011·2 cites·14 claims
- 1159US8022462B2Methods of forming shallow trench isolation structures with buried bit lines in non-volatile memoriesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 20, 2011·1 cites·12 claims
- 1258US6438027B1Nonvolatile memory, cell array thereof, and method for sensing data therefromHYUNDAI ELECTRONICS IND·Filed 2001·Granted Aug 20, 2002·7 cites·5 claims
- 1357US6501680B1Nonvolatile memory, cell array thereof, and method for sensing data therefromHYUNDAI ELECTRONICS IND·Filed 2002·Granted Dec 31, 2002·8 cites·3 claims
- 1454US7230853B2Selective erase method for flash memorySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 12, 2007·9 cites·21 claims
- 1553US2024234558A9Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1651US6218246B1Fabrication method of triple polysilicon flash eeprom arraysHYUNDAI ELECTRONICS IND·Filed 1999·Granted Apr 17, 2001·13 cites·13 claims
- 1749US6566197B2Method for fabricating connection structure between segment transistor and memory cell region of flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted May 20, 2003·4 cites·8 claims
- 1848US8354708B2Methods of forming and operating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 15, 2013·0 cites·12 claims
- 1948US6649967B2Non-volatile memory device with a floating gate having a tapered protrusionHYUNDAI ELECTRONICS IND·Filed 2001·Granted Nov 18, 2003·4 cites·15 claims
- 2046US2011302363A1Non-volatile memories, cards, and systems including shallow trench isolation structures with buried bit linesKWON WOOK HYUN·Filed 2011·Application pending·0 cites
- 2141US7276415B2Contactless nonvolatile memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 2, 2007·0 cites·7 claims
- 2235US2007268749A1Method for operating non-volatile memory deviceKIM DAE-MANN·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →