Inventor · disambiguated record
Woo Chang Lim
Also filed as: LIM WOO-CHANG
31 granted patents·7 pending applications·182 citations·filing 2010–2024
96Inventor score
Top patents by PatentIndex Score
38 records- 0199US9859333B2Magnetic memory devices having a perpendicular magnetic tunnel junctionSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 2, 2018·42 cites·13 claims
- 0296US8803265B2Magnetic memory layer and magnetic memory device including the sameLIM WOO-CHANG·Filed 2011·Granted Aug 12, 2014·46 cites·20 claims
- 0391US9048412B2Magnetic memory devices including magnetic layers separated by tunnel barriersOH SECHUNG·Filed 2014·Granted Jun 2, 2015·9 cites·21 claims
- 0491US8476722B2Magnetic memory deviceLEE JANGEUM·Filed 2011·Granted Jul 2, 2013·15 cites·27 claims
- 0590US8445979B2Magnetic memory devices including magnetic layers separated by tunnel barriersOH SECHUNG·Filed 2010·Granted May 21, 2013·9 cites·38 claims
- 0688US9842637B2Magnetic memory device and method of fabricating the sameKIM KI WOONG·Filed 2016·Granted Dec 12, 2017·6 cites·20 claims
- 0785US9276198B2Magnetic memory devicesLIM WOO CHANG·Filed 2013·Granted Mar 1, 2016·12 cites·14 claims
- 0884US10892400B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 12, 2021·4 cites·20 claims
- 0984US9065039B2Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the samePARK JEONG HEON·Filed 2014·Granted Jun 23, 2015·5 cites·6 claims
- 1084US8847341B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 30, 2014·4 cites·17 claims
- 1182US8288289B2Method of fabricating semiconductor deviceJEONG JUN-HO·Filed 2011·Granted Oct 16, 2012·8 cites·20 claims
- 1279US8405173B2Magnetic memory devicesKIM WOOJIN·Filed 2011·Granted Mar 26, 2013·7 cites·20 claims
- 1376US8772846B2Magnetic tunneling junction devices, memories, memory systems, and electronic devicesPARK JEONG HEON·Filed 2012·Granted Jul 8, 2014·4 cites·29 claims
- 1475US9490298B2Magnetic memory devices having a perpendicular magnetic tunnel junctionKIM WOOJIN·Filed 2014·Granted Nov 8, 2016·2 cites·16 claims
- 1572US11665970B2Magnetoresistive random access memory (MRAM) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 30, 2023·0 cites·20 claims
- 1671US11031549B2Magnetoresistive random access memory (MRAM) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 8, 2021·0 cites·20 claims
- 1771US10784442B2Method of manufacturing a magnetoresistive random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 22, 2020·1 cites·18 claims
- 1871US8445981B2Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming a perpendicular magnetic film of the sameLIM WOO CHANG·Filed 2011·Granted May 21, 2013·4 cites·48 claims
- 1966US8947914B2Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the samePARK JEONG HEON·Filed 2012·Granted Feb 3, 2015·1 cites·16 claims
- 2065US2025344401A1Magnetic memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2164US8772887B2Magnetic deviceLIM WOO-CHANG·Filed 2012·Granted Jul 8, 2014·1 cites·17 claims
- 2263US9048417B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 2, 2015·0 cites·6 claims
- 2362US9343660B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 17, 2016·0 cites·8 claims
- 2459US8697484B2Method and system for setting a pinned layer in a magnetic tunneling junctionAPALKOV DMYTRO·Filed 2011·Granted Apr 15, 2014·2 cites·8 claims
- 2557US2013234269A1Magnetic memory devices including magnetic layers separated by tunnel barriersOH SECHUNG·Filed 2013·Application pending·0 cites
- 2654US9356228B2Magnetic tunneling junction devices, memories, memory systems, and electronic devicesPARK JEONG HEON·Filed 2015·Granted May 31, 2016·0 cites·15 claims
- 2753US10734051B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 4, 2020·0 cites·13 claims
- 2852US10847713B2Cryogenic oxidation of metal layer of magnetic-tunnel-junction (MTJ) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 24, 2020·0 cites·19 claims
- 2949US10482939B2Magnetic memory device and method of writing magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 19, 2019·0 cites·16 claims
- 3049US8987798B2Magnetic tunneling junction devices, memories, memory systems, and electronic devicesPARK JEONG HEON·Filed 2014·Granted Mar 24, 2015·0 cites·19 claims
- 3145US2015207064A1Methods of manufacturing magnetoresistive random access memory devicesLEE JOON-MYOUNG·Filed 2014·Application pending·0 cites
- 3244US2018151209A1Magnetic memory device and method of writing magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Application pending·0 cites
- 3343US9324941B2Semiconductor devices and methods for fabricating the sameKIM WHANKYUN·Filed 2014·Granted Apr 26, 2016·0 cites·18 claims
- 3443US2016133831A1Method of forming metal oxide layer and magnetic memory device including the sameKIM KI WOONG·Filed 2015·Application pending·0 cites
- 3541US11127786B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 21, 2021·0 cites·17 claims
- 3639US8716112B2Method for crystallizing amorphous silicon thin film and method for fabricating poly crystalline thin film transistor using the sameJOO SEUNG KI·Filed 2012·Granted May 6, 2014·0 cites·18 claims
- 3737US2014339504A1Magnetic memory device and method of manufacturing the sameKIM KYOUNGSUN·Filed 2014·Application pending·0 cites
- 3831US2016020386A1Method of manufacturing magnetic deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →