Inventor · disambiguated record
Won Gi Min
Also filed as: MIN WON GI
19 granted patents·1 pending application·139 citations·filing 2005–2015
94Inventor score
Top patents by PatentIndex Score
20 records- 0194US7608513B2Dual gate LDMOS device fabrication methodsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Oct 27, 2009·30 cites·20 claims
- 0288US8319283B2Laterally diffused metal oxide semiconductor (LDMOS) device with multiple gates and doped regionsMIN WON GI·Filed 2009·Granted Nov 27, 2012·23 cites·13 claims
- 0386US7795674B2Dual gate LDMOS devicesFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Sep 14, 2010·9 cites·20 claims
- 0485US9136323B2Drain-end drift diminution in semiconductor devicesYANG HONGNING·Filed 2014·Granted Sep 15, 2015·6 cites·20 claims
- 0585US8853780B2Semiconductor device with drain-end drift diminutionYANG HONGNING·Filed 2012·Granted Oct 7, 2014·7 cites·19 claims
- 0683US7700405B2Microelectronic assembly with improved isolation voltage performance and a method for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Apr 20, 2010·10 cites·20 claims
- 0783US7256471B2Antifuse element and electrically redundant antifuse array for controlled rupture locationFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 14, 2007·12 cites·18 claims
- 0882US8049299B2Antifuses with curved breakdown regionsFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Nov 1, 2011·9 cites·16 claims
- 0982US7795702B2Microelectronic assemblies with improved isolation voltage performanceFREESCALE SEMICONDUCTOR INC·Filed 2010·Granted Sep 14, 2010·6 cites·20 claims
- 1076US7553704B2Antifuse element and method of manufactureFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jun 30, 2009·6 cites·13 claims
- 1173US8329514B2Methods for forming antifuses with curved breakdown regionsMIN WON GI·Filed 2011·Granted Dec 11, 2012·3 cites·17 claims
- 1273US7411270B2Composite capacitor and method for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Aug 12, 2008·8 cites·10 claims
- 1370US9601614B2Composite semiconductor device with different channel widthsMIN WON GI·Filed 2015·Granted Mar 21, 2017·2 cites·20 claims
- 1468US9159803B2Semiconductor device with HCI protection regionMIN WON GI·Filed 2012·Granted Oct 13, 2015·3 cites·20 claims
- 1568US7834417B2Antifuse elementsFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Nov 16, 2010·3 cites·18 claims
- 1663US9041103B2RESURF semiconductor device charge balancingMIN WON GI·Filed 2013·Granted May 26, 2015·1 cites·15 claims
- 1758US8389366B2Resurf semiconductor device charge balancingMIN WON GI·Filed 2008·Granted Mar 5, 2013·1 cites·14 claims
- 1853US9466712B2Resurf semiconductor device charge balancingFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Oct 11, 2016·0 cites·5 claims
- 1947US9589967B2Fast programming antifuse and method of manufactureFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Mar 7, 2017·0 cites·19 claims
- 2044US2008277756A1Electronic device and method for operating a memory circuitFREESCALE SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →