Inventor · disambiguated record
Won-Sang Song
Also filed as: SONG WON · SONG WON-SANG
15 granted patents·167 citations·filing 2000–2009
94Inventor score
Top patents by PatentIndex Score
15 records- 0186US7205666B2Interconnections having double capping layer and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 17, 2007·10 cites·10 claims
- 0280US6842028B2Apparatus for testing reliability of interconnection in integrated circuitSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 11, 2005·21 cites·12 claims
- 0378US6580134B1Field effect transistors having elevated source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jun 17, 2003·22 cites·26 claims
- 0477US7605472B2Interconnections having double capping layer and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 20, 2009·5 cites·11 claims
- 0577US6511888B1Method of fabricating a semiconductor device using trench isolation method including hydrogen annealing stepSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jan 28, 2003·21 cites·6 claims
- 0674US6693446B2Apparatus for testing reliability of interconnection in integrated circuitSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 17, 2004·18 cites·15 claims
- 0771US7037835B2Interconnections having double capping layer and method for forming the sameSAMSUNG ELECRTONICS CO LTD·Filed 2003·Granted May 2, 2006·13 cites·17 claims
- 0866US6888261B2Alignment mark and exposure alignment system and method using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 3, 2005·12 cites·6 claims
- 0965US6645866B2Method of fabricating a semiconductor device using trench isolation method including hydrogen annealing stepSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 11, 2003·11 cites·12 claims
- 1062US6881630B2Methods for fabricating field effect transistors having elevated source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 19, 2005·9 cites·17 claims
- 1160US6740587B2Semiconductor device having a metal silicide layer and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 25, 2004·6 cites·24 claims
- 1256US7951712B2Interconnections having double capping layer and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 31, 2011·0 cites·16 claims
- 1356US6667253B2Alignment mark and exposure alignment system and method using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 23, 2003·8 cites·8 claims
- 1455US6451691B2Methods of manufacturing a metal pattern of a semiconductor device which include forming nitride layer at exposed sidewalls of Ti layer of the patternSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 17, 2002·7 cites·18 claims
- 1550US6690187B2Apparatus for testing reliability of interconnection in integrated circuitSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 10, 2004·4 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →