Inventor · disambiguated record
Woong Je Sung
Also filed as: SUNG WOONG J · SUNG WOONG JE
12 granted patents·3 pending applications·192 citations·filing 2004–2013
87Inventor score
Files withDONGBU ELECTRONICS CO LTD8SAMSUNG ELECTRONICS CO LTD2DONGBU ELECTRONICS1DONGBUANAM SEMICONDUCTOR INC1SUNG WOONG J1
Top patents by PatentIndex Score
15 records- 0196US7482238B2Method for manufacturing semiconductor deviceDONGBU ELECTRONICS CO LTD·Filed 2005·Granted Jan 27, 2009·157 cites·1 claims
- 0286US9053964B2Semiconductor devices including a first and second HFET and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 9, 2015·8 cites·25 claims
- 0378US7018899B2Methods of fabricating lateral double-diffused metal oxide semiconductor devicesDONGBUANAM SEMICONDUCTOR INC·Filed 2004·Granted Mar 28, 2006·23 cites·4 claims
- 0467US7595535B2Resistor of semiconductor device and method for fabricating the sameDONGBU ELECTRONICS CO LTD·Filed 2008·Granted Sep 29, 2009·2 cites·9 claims
- 0560US7247507B2Method for forming LOCOS layer in semiconductor deviceDONGBU ELECTRONICS CO LTD·Filed 2005·Granted Jul 24, 2007·2 cites·15 claims
- 0651US7439147B2Resistor of semiconductor device and method for fabricating the sameDONGBU ELECTRONICS CO LTD·Filed 2006·Granted Oct 21, 2008·0 cites·5 claims
- 0749US7442617B2Method for manufacturing bipolar transistorDONGBU ELECTRONICS CO LTD·Filed 2007·Granted Oct 28, 2008·0 cites·12 claims
- 0847US7329584B2Method for manufacturing bipolar transistorDONGBU ELECTRONICS CO LTD·Filed 2006·Granted Feb 12, 2008·0 cites·6 claims
- 0944US9129835B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 8, 2015·0 cites·19 claims
- 1044US7446013B2Method of measuring pattern shift in semiconductor deviceDONGBU ELECTRONICS CO LTD·Filed 2006·Granted Nov 4, 2008·0 cites·19 claims
- 1142US7727851B2Method of measuring shifted epitaxy layer by buried layerDONGBU ELECTRONICS·Filed 2006·Granted Jun 1, 2010·0 cites·6 claims
- 1242US2008038909A1Method of Fabricating Lateral Double Diffused Metal Oxide Semiconductor Field Effect TransistorSUNG WOONG JE·Filed 2007·Application pending·0 cites
- 1339US7674681B2Semiconductor device and method for manufacturing the sameDONGBU ELECTRONICS CO LTD·Filed 2006·Granted Mar 9, 2010·0 cites·19 claims
- 1439US2006148184A1Method for forming LDMOS channelSUNG WOONG J·Filed 2005·Application pending·0 cites
- 1534US2005139858A1Lateral double-diffused MOS transistor deviceFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →