Inventor · disambiguated record
Wu-Wei Tsai
Also filed as: TSAI WU-WEI
14 granted patents·24 pending applications·11 citations·filing 2011–2025
86Inventor score
Top patents by PatentIndex Score
38 records- 0190US2025359186A1Thin film transistor including a compositionally-modulated active region and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0288US2025318198A1Thin film transistor including a compositionally-graded gate dielectric and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0385US9331294B2Vertical electro-optical component and method of fabricating the sameUNIV NAT CHIAO TUNG·Filed 2014·Granted May 3, 2016·4 cites·7 claims
- 0484US2024363716A1Thin film transistor including a compositionally-graded gate dielectric and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0583US12369354B2Thin film transistor including a compositionally- graded gate dielectric and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
- 0682US12402358B2Thin film transistor including a compositionally-modulated active region and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 0777US2024379867A1Transistor including an active region and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0875US12113115B2Thin film transistor including a compositionally-graded gate dielectric and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 8, 2024·0 cites·20 claims
- 0975US9391208B2Electronic device and method of manufacturing the sameIND TECH RES INST·Filed 2014·Granted Jul 12, 2016·4 cites·26 claims
- 1074US11984508B2Thin film transistor including a compositionally-modulated active region and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 14, 2024·0 cites·20 claims
- 1174US2024379872A1Thin film transistor including a compositionally-modulated active region and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1273US2024379858A1Passivation structure for a thin film transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1372US9368441B2Electronic component and method for fabricating the sameIND TECH RES INST·Filed 2014·Granted Jun 14, 2016·3 cites·12 claims
- 1471US2025142890A1Transistor including an active region and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1571US2024222519A1Carrier modification devices for avoiding channel length reduction and methods for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1667US12224352B2Transistor including an active region and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 11, 2025·0 cites·20 claims
- 1766US12402350B2Passivation structure for a thin film transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 26, 2025·0 cites·20 claims
- 1866US12040409B2Thin film transistor including a dielectric diffusion barrier and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 16, 2024·0 cites·20 claims
- 1966US11955561B2Carrier modification devices for avoiding channel length reduction and methods for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 9, 2024·0 cites·20 claims
- 2063US12199188B2Thin film transistor including a compositionally-modulated active region and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 14, 2025·0 cites·20 claims
- 2159US2025374608A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2258US2025374641A1Transistor structures and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2357US12274070B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·17 claims
- 2457US2025220974A1Integrated circuit device using oxide semiconductor with oxygen vacancy stabilizing materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2556US8723165B2Vertical electro-optical component and method of fabricating the sameZAN HSIAO-WEN·Filed 2011·Granted May 13, 2014·0 cites·12 claims
- 2656US2024387710A1Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2756US2025254911A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2855US2025351534A1Transistor device with gas-blocking layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2955US2024379870A1Thin film transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3054US2024234582A1Semiconductor device including a blocking layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3154US2024113225A1Semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3253US2024250133A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3353US2024355822A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3453US2024381659A1Semiconductor memory structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3552US2024145571A1Inserting inhibition layer for inducing antiferroelectricity to ferroelectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3651US2024006538A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3750US2024113222A1Threshold voltage modulation for thin film transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3838US2014217400A1Semiconductor element structure and manufacturing method for the sameIND TECH RES INST·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →