Inventor · disambiguated record
Xia An
Also filed as: AN XIA
14 granted patents·7 pending applications·19 citations·filing 2010–2025
86Inventor score
Top patents by PatentIndex Score
21 records- 0177US8673722B2Strained channel field effect transistor and the method for fabricating the sameHUANG RU·Filed 2011·Granted Mar 18, 2014·6 cites·5 claims
- 0276US8865543B2Ge-based NMOS device and method for fabricating the sameHUANG RU·Filed 2012·Granted Oct 21, 2014·4 cites·9 claims
- 0367US9508852B2Radiation-hardened-by-design (RHBD) multi-gate deviceUNIV BEIJING·Filed 2013·Granted Nov 29, 2016·3 cites·6 claims
- 0465US9086448B2Method for predicting reliable lifetime of SOI mosfet deviceHUANG RU·Filed 2011·Granted Jul 21, 2015·2 cites·5 claims
- 0562US8632691B2Interface treatment method for germanium-based deviceHUANG RU·Filed 2012·Granted Jan 21, 2014·1 cites·5 claims
- 0661US8541847B2Semiconductor device and method for fabricating the sameAN XIA·Filed 2010·Granted Sep 24, 2013·2 cites·11 claims
- 0758US8450155B2Method for introducing channel stress and field effect transistor fabricated by the sameHUANG RU·Filed 2011·Granted May 28, 2013·1 cites·4 claims
- 0848US9484208B2Preparation method of a germanium-based schottky junctionUNIV BEIJING·Filed 2013·Granted Nov 1, 2016·0 cites·8 claims
- 0948US2025157944A1Multi-gate total ionizing dose (tid) radiation-hardened deviceUNIV BEIJING·Filed 2025·Application pending·0 cites
- 1044US9312126B2Method for processing gate dielectric layer deposited on germanium-based or group III-V compound-based substrateUNIV BEIJING·Filed 2014·Granted Apr 12, 2016·0 cites·16 claims
- 1143US11525857B2Method for characterizing fluctuation induced by single particle irradiation in a device and application thereofUNIV BEIJING·Filed 2022·Granted Dec 13, 2022·0 cites·7 claims
- 1242US9147597B2Method for isolating active regions in germanium-based MOS deviceLI MING·Filed 2012·Granted Sep 29, 2015·0 cites·10 claims
- 1340US8722312B2Method for fabricating semiconductor nano circular ringHUANG RU·Filed 2011·Granted May 13, 2014·0 cites·7 claims
- 1438US8652929B2CMOS device for reducing charge sharing effect and fabrication method thereofHUANG RU·Filed 2012·Granted Feb 18, 2014·0 cites·6 claims
- 1538US2013013245A1Method for obtaining distribution of charges along channel in mos transistorUNIV BEIJING·Filed 2011·Application pending·0 cites
- 1637US2015219698A1Method for separating threshold voltage shifts caused by two effects in soi deviceUNIV BEIJING·Filed 2013·Application pending·0 cites
- 1737US2013069126A1Germanium-based nmos device and method for fabricating the sameHUANG RU·Filed 2012·Application pending·0 cites
- 1836US8877594B2CMOS device for reducing radiation-induced charge collection and method for fabricating the sameHUANG RU·Filed 2011·Granted Nov 4, 2014·0 cites·4 claims
- 1936US2012289004A1Fabrication method of germanium-based n-type schottky field effect transistorHUANG RU·Filed 2011·Application pending·0 cites
- 2034US2015014765A1Radiation resistant cmos device and method for fabricating the sameUNIV BEIJING·Filed 2013·Application pending·0 cites
- 2131US2012264311A1Surface treatment method for germanium based deviceAN XIA·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →