Inventor · disambiguated record
Xiangzheng Bo
Also filed as: BO XIANGZHENG
9 granted patents·56 citations·filing 2007–2020
85Inventor score
Top patents by PatentIndex Score
9 records- 0191US7799650B2Method for making a transistor with a stressorFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Sep 21, 2010·27 cites·16 claims
- 0287US9343468B1Feed-forward bidirectional implanted split-gate flash memory cellTEXAS INSTRUMENTS INC·Filed 2015·Granted May 17, 2016·5 cites·12 claims
- 0385US9966380B1Select gate self-aligned patterning in split-gate flash memory cellTEXAS INSTRUMENTS INC·Filed 2016·Granted May 8, 2018·6 cites·20 claims
- 0483US7727870B2Method of making a semiconductor device using a stressorFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jun 1, 2010·13 cites·16 claims
- 0572US10553596B2Select gate self-aligned patterning in split-gate flash memory cellTEXAS INSTRUMENTS INC·Filed 2018·Granted Feb 4, 2020·2 cites·19 claims
- 0669US7678698B2Method of forming a semiconductor device with multiple tensile stressor layersFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Mar 16, 2010·3 cites·18 claims
- 0765US12490427B2Select gate self-aligned patterning in split-gate flash memory cellTEXAS INSTRUMENTS INC·Filed 2020·Granted Dec 2, 2025·0 cites·16 claims
- 0848US9461060B1Feed-forward bidirectional implanted split-gate flash memory cellTEXAS INSTRUMENTS INC·Filed 2016·Granted Oct 4, 2016·0 cites·8 claims
- 0946US9318337B2Three dimensional three semiconductor high-voltage capacitorsTEXAS INSTRUMENTS INC·Filed 2014·Granted Apr 19, 2016·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →