Inventor · disambiguated record
Xiaonan Chen
Also filed as: CHEN XIAONAN
32 granted patents·2 pending applications·199 citations·filing 2009–2021
96Inventor score
Files withQUALCOMM INC17MICRON TECHNOLOGY INC10CHEN XIAONAN5BEIJING JINGDONG ZHENSHI INFORMATION TECH CO LTD1RAMASWAMY D V NIRMAL1
Top patents by PatentIndex Score
34 records- 0197US9112138B2Methods of forming resistive memory elementsRAMASWAMY D V NIRMAL·Filed 2012·Granted Aug 18, 2015·23 cites·17 claims
- 0296US8958233B2Stabilization of resistive memoryCHEN XIAONAN·Filed 2011·Granted Feb 17, 2015·27 cites·32 claims
- 0394US9773551B2Memory programming methods and memory systemsMICRON TECHNOLOGY INC·Filed 2016·Granted Sep 26, 2017·16 cites·34 claims
- 0494US9576801B2High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memoryQUALCOMM INC·Filed 2014·Granted Feb 21, 2017·17 cites·24 claims
- 0594US9230685B2Memory programming methods and memory systemsMICRON TECHNOLOGY INC·Filed 2012·Granted Jan 5, 2016·16 cites·34 claims
- 0692US10964380B1Integrated device comprising memory bitcells comprising shared preload line and shared activation lineQUALCOMM INC·Filed 2020·Granted Mar 30, 2021·3 cites·26 claims
- 0792US9224471B2Stabilization of resistive memoryMICRON TECHNOLOGY INC·Filed 2015·Granted Dec 29, 2015·11 cites·20 claims
- 0889US10304531B2Memory programming methods and memory systemsMICRON TECHNOLOGY INC·Filed 2017·Granted May 28, 2019·7 cites·36 claims
- 0989US8730708B2Performing forming processes on resistive memoryCHEN XIAONAN·Filed 2011·Granted May 20, 2014·11 cites·34 claims
- 1088US10340370B2Asymmetric gated fin field effect transistor (FET) (finFET) diodesQUALCOMM INC·Filed 2016·Granted Jul 2, 2019·6 cites·19 claims
- 1188US9245648B1Logic high-dielectric-constant (HK) metal-gate (MG) one-time-programming (OTP) memory device sensing methodQUALCOMM INC·Filed 2014·Granted Jan 26, 2016·12 cites·30 claims
- 1286US9419220B2Resistive memory elements, resistive memory cells, and resistive memory devicesMICRON TECHNOLOGY INC·Filed 2015·Granted Aug 16, 2016·4 cites·20 claims
- 1386US8446758B2Variable resistance memory programmingCHEN XIAONAN·Filed 2010·Granted May 21, 2013·9 cites·33 claims
- 1486US8189968B2Multimode interference coupler for use with slot photonic crystal waveguidesCHEN XIAONAN·Filed 2009·Granted May 29, 2012·14 cites·26 claims
- 1583US9508439B2Non-volatile multiple time programmable memory deviceQUALCOMM INC·Filed 2015·Granted Nov 29, 2016·4 cites·28 claims
- 1680US10290352B2System, apparatus, and method of programming a one-time programmable memory circuit having dual programming regionsQUALCOMM INC·Filed 2015·Granted May 14, 2019·3 cites·23 claims
- 1771US9576658B2Systems, and devices, and methods for programming a resistive memory cellMICRON TECHNOLOGY INC·Filed 2016·Granted Feb 21, 2017·2 cites·20 claims
- 1871US8773899B2Variable resistance memory programmingMICRON TECHNOLOGY INC·Filed 2013·Granted Jul 8, 2014·3 cites·21 claims
- 1969US9876123B2Non-volatile one-time programmable memory deviceQUALCOMM INC·Filed 2014·Granted Jan 23, 2018·3 cites·33 claims
- 2065US8787095B2Systems, and devices, and methods for programming a resistive memory cellCHEN XIAONAN·Filed 2012·Granted Jul 22, 2014·2 cites·19 claims
- 2164US9496048B2Differential one-time-programmable (OTP) memory arrayQUALCOMM INC·Filed 2015·Granted Nov 15, 2016·2 cites·20 claims
- 2263US9413349B1High-K (HK)/metal gate (MG) (HK/MG) multi-time programmable (MTP) switching devices, and related systems and methodsQUALCOMM INC·Filed 2015·Granted Aug 9, 2016·2 cites·32 claims
- 2356US9812188B2Static random-access memory (SRAM) sensor for bias temperature instabilityQUALCOMM INC·Filed 2015·Granted Nov 7, 2017·1 cites·30 claims
- 2456US9449709B1Volatile memory and one-time program (OTP) compatible memory cell and programming methodQUALCOMM INC·Filed 2015·Granted Sep 20, 2016·1 cites·20 claims
- 2554US10991427B2Memory programming methods and memory systemsMICRON TECHNOLOGY INC·Filed 2019·Granted Apr 27, 2021·0 cites·30 claims
- 2653US11631455B2Compute-in-memory bitcell with capacitively-coupled write operationQUALCOMM INC·Filed 2021·Granted Apr 18, 2023·0 cites·29 claims
- 2749US9281062B2Systems, and devices, and methods for programming a resistive memory cellMICRON TECHNOLOGY INC·Filed 2014·Granted Mar 8, 2016·0 cites·22 claims
- 2848US9001561B2Performing forming processes on resistive memoryMICRON TECHNOLOGY INC·Filed 2014·Granted Apr 7, 2015·0 cites·27 claims
- 2946US9431097B2Volatile/non-volatile SRAM deviceQUALCOMM INC·Filed 2014·Granted Aug 30, 2016·0 cites·25 claims
- 3046US2019156895A1System, apparatus, and method of programming a one-time programmable memory circuitQUALCOMM INC·Filed 2019·Application pending·0 cites
- 3143US12093777B2Method and terminal for identifying barcodeBEIJING JINGDONG ZHENSHI INFORMATION TECH CO LTD·Filed 2021·Granted Sep 17, 2024·0 cites·17 claims
- 3243US11626156B2Compute-in-memory (CIM) bit cell circuits each disposed in an orientation of a cim bit cell circuit layout including a read word line (RWL) circuit in a cim bit cell array circuitQUALCOMM INC·Filed 2021·Granted Apr 11, 2023·0 cites·19 claims
- 3341US11581037B2Digital compute-in-memory (DCIM) bit cell circuit layouts and DCIM arrays for multiple operations per columnQUALCOMM INC·Filed 2021·Granted Feb 14, 2023·0 cites·17 claims
- 3440US2022108742A1Differential charge sharing for compute-in-memory (cim) cellQUALCOMM INC·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →