Inventor · disambiguated record
Xiying Chen
Also filed as: CHEN XIYING
15 granted patents·2 pending applications·213 citations·filing 2008–2012
93Inventor score
Top patents by PatentIndex Score
17 records- 0197US7830698B2Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using sameSANDISK 3D LLC·Filed 2008·Granted Nov 9, 2010·74 cites·25 claims
- 0295US8062918B2Surface treatment to improve resistive-switching characteristicsMILLER MICHAEL·Filed 2008·Granted Nov 22, 2011·23 cites·23 claims
- 0392US8450181B2In-situ passivation methods to improve performance of polysilicon diodeCHEN XIYING·Filed 2010·Granted May 28, 2013·21 cites·17 claims
- 0491US8289749B2Soft forming reversible resistivity-switching element for bipolar switchingCHEN XIYING·Filed 2009·Granted Oct 16, 2012·29 cites·30 claims
- 0591US7955981B2Method of making a two-terminal non-volatile memory pillar device with rounded cornerSANDISK 3D LLC·Filed 2009·Granted Jun 7, 2011·15 cites·13 claims
- 0689US7897453B2Dual insulating layer diode with asymmetric interface state and method of fabricationSANDISK 3D LLC·Filed 2008·Granted Mar 1, 2011·20 cites·39 claims
- 0784US7978496B2Method of programming a nonvolatile memory device containing a carbon storage materialSANDISK 3D LLC·Filed 2008·Granted Jul 12, 2011·8 cites·18 claims
- 0880US7969011B2MIIM diodes having stacked structureSANDISK 3D LLC·Filed 2008·Granted Jun 28, 2011·9 cites·26 claims
- 0977US7723180B2Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using sameSANDISK 3D LLC·Filed 2008·Granted May 25, 2010·5 cites·28 claims
- 1067US7859887B2Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using sameSANDISK 3D LLC·Filed 2008·Granted Dec 28, 2010·6 cites·13 claims
- 1160US8592793B2Electrode diffusions in two-terminal non-volatile memory devicesCHEN XIYING·Filed 2011·Granted Nov 26, 2013·1 cites·19 claims
- 1260US2010006812A1Carbon-based resistivity-switching materials and methods of forming the sameSANDISK 3D LLC·Filed 2009·Application pending·0 cites
- 1356US8450835B2Reverse leakage reduction and vertical height shrinking of diode with halo dopingCHEN XIYING·Filed 2008·Granted May 28, 2013·1 cites·12 claims
- 1453US2010078758A1Miim diodesSEKAR DEEPAK C·Filed 2008·Application pending·0 cites
- 1548US8470646B2Modulation of resistivity in carbon-based read-writeable materialsXU HUIWEN·Filed 2009·Granted Jun 25, 2013·1 cites·17 claims
- 1646US8637845B2Optimized electrodes for Re-RAMSEKAR DEEPAK C·Filed 2012·Granted Jan 28, 2014·0 cites·12 claims
- 1740US8263420B2Optimized electrodes for Re-RAMSEKAR DEPAK C·Filed 2009·Granted Sep 11, 2012·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →