Inventor · disambiguated record
Xiaowang Dai
Also filed as: DAI XIAOWANG
19 granted patents·3 pending applications·53 citations·filing 2018–2024
92Inventor score
Top patents by PatentIndex Score
22 records- 0198US11133325B2Memory cell structure of a three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Sep 28, 2021·14 cites·9 claims
- 0292US10680003B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jun 9, 2020·6 cites·12 claims
- 0392US10672711B2Word line contact structure for three-dimensional memory devices and fabrication methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jun 2, 2020·7 cites·19 claims
- 0492US10658378B2Through array contact (TAC) for three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted May 19, 2020·9 cites·20 claims
- 0590US11991880B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted May 21, 2024·2 cites·9 claims
- 0689US10515975B1Method for forming dual-deck channel hole structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 24, 2019·6 cites·20 claims
- 0787US10937806B2Through array contact (TAC) for three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Mar 2, 2021·2 cites·20 claims
- 0886US10644015B2Memory cell structure of a three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted May 5, 2020·3 cites·9 claims
- 0986US2025031366A1Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1083US11145666B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 12, 2021·1 cites·20 claims
- 1182US10847528B2Memory cell structure of a three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Nov 24, 2020·1 cites·20 claims
- 1281US12137558B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Nov 5, 2024·0 cites·20 claims
- 1377US12142575B2Staircase etch control in forming three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·18 claims
- 1476US12010838B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jun 11, 2024·0 cites·20 claims
- 1575US10522474B2Staircase etch control in forming three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 31, 2019·1 cites·19 claims
- 1673US12063780B2Memory cell structure of a three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 13, 2024·0 cites·20 claims
- 1771US10763099B2Wafer flatness control using backside compensation structureYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Sep 1, 2020·1 cites·21 claims
- 1865US2024416544A1Pole piece cutting deviceWUXI LEAD INTELLIGENT EQUIPMENT CO LTD·Filed 2024·Application pending·0 cites
- 1964US12490440B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Granted Dec 2, 2025·0 cites·20 claims
- 2063US11101276B2Word line contact structure for three-dimensional memory devices and fabrication methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Aug 24, 2021·0 cites·18 claims
- 2161US2020203285A1Staircase etch control in forming three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2019·Application pending·0 cites
- 2256US10804287B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Oct 13, 2020·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →