Inventor · disambiguated record
Xiaoshe Deng
Also filed as: DENG XIAOSHE
15 granted patents·14 citations·filing 2013–2017
86Inventor score
Files withCSMC TECHNOLOGIES FAB1 CO LTD15
Top patents by PatentIndex Score
15 records- 0179US9620615B2IGBT manufacturing methodCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Apr 11, 2017·4 cites·8 claims
- 0277US9673193B2Manufacturing method for reverse conducting insulated gate bipolar transistorCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Jun 6, 2017·4 cites·10 claims
- 0375US9954074B2Insulated gate bipolar transistor and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Apr 24, 2018·4 cites·7 claims
- 0466US9443926B2Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Sep 13, 2016·2 cites·10 claims
- 0549US9881994B2Insulated gate bipolar transistor and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Jan 30, 2018·0 cites·10 claims
- 0649US9607851B2Method for removing polysilicon protection layer on a back face of an IGBT having a field stop structureCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2013·Granted Mar 28, 2017·0 cites·20 claims
- 0748US9666682B2Reverse conduction insulated gate bipolar transistor (IGBT) manufacturing methodCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted May 30, 2017·0 cites·9 claims
- 0847US10084036B2Insulated gate bipolar transistor and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2017·Granted Sep 25, 2018·0 cites·7 claims
- 0945US10096699B2Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Oct 9, 2018·0 cites·10 claims
- 1044US9583587B2Method for manufacturing injection-enhanced insulated-gate bipolar transistorCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Feb 28, 2017·0 cites·10 claims
- 1141US9590029B2Method for manufacturing insulated gate bipolar transistorCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Mar 7, 2017·0 cites·10 claims
- 1240US9595520B2IGBT with built-in diode and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Mar 14, 2017·0 cites·8 claims
- 1340US9502534B2Preparation method for power diodeCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Nov 22, 2016·0 cites·10 claims
- 1439US9502497B2Method for preparing power diodeCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Nov 22, 2016·0 cites·10 claims
- 1532US10062746B2Semiconductor rectifier and manufacturing method thereofCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2015·Granted Aug 28, 2018·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →