Inventor · disambiguated record
Xia Li
Also filed as: LI XIA · LI XIA SUSAN
329 granted patents·124 pending applications·2,267 citations·filing 1998–2025
99Inventor score
Files withQUALCOMM INC254LI XIA47APPLE INC14ADVANCED MICRO DEVICES INC12GREE ELECTRIC APPLIANCES INC ZHUHAI11
Top patents by PatentIndex Score
453 records- 0199US9142762B1Magnetic tunnel junction and method for fabricating a magnetic tunnel junctionQUALCOMM INC·Filed 2014·Granted Sep 22, 2015·45 cites·10 claims
- 0299US8866242B2MTJ structure and integration schemeLI XIA·Filed 2011·Granted Oct 21, 2014·39 cites·12 claims
- 0398US11393819B2Semiconductor device implemented with buried railsQUALCOMM INC·Filed 2020·Granted Jul 19, 2022·7 cites·18 claims
- 0498USD948251SCabinetLI XIA·Filed 2021·Granted Apr 12, 2022·37 cites·1 claims
- 0598USD946937SCabinetLI XIA·Filed 2021·Granted Mar 29, 2022·45 cites·1 claims
- 0698USD922106SCabinetLI XIA·Filed 2021·Granted Jun 15, 2021·45 cites·1 claims
- 0798US10043967B2Self-compensation of stray field of perpendicular magnetic elementsQUALCOMM INC·Filed 2014·Granted Aug 7, 2018·36 cites·12 claims
- 0898US9875784B1Three-dimensional (3D) ferroelectric dipole metal-oxide semiconductor ferroelectric field-effect transistor (MOSFeFET) system, and related methods and systemsQUALCOMM INC·Filed 2017·Granted Jan 23, 2018·59 cites·30 claims
- 0998US9373782B2MTJ structure and integration schemeQUALCOMM INC·Filed 2014·Granted Jun 21, 2016·21 cites·16 claims
- 1097US11355056B2Local active matrix architectureAPPLE INC·Filed 2021·Granted Jun 7, 2022·4 cites·20 claims
- 1197US9437272B1Multi-bit spin torque transfer magnetoresistive random access memory with sub-arraysQUALCOMM INC·Filed 2015·Granted Sep 6, 2016·33 cites·30 claims
- 1297US9406875B2MRAM integration techniques for technology scalingQUALCOMM INC·Filed 2013·Granted Aug 2, 2016·20 cites·13 claims
- 1397US8865481B2MRAM device and integration techniques compatible with logic integrationQUALCOMM INC·Filed 2014·Granted Oct 21, 2014·17 cites·20 claims
- 1497US8704320B2Strain induced reduction of switching current in spin-transfer torque switching devicesZHU XIAOCHUN·Filed 2012·Granted Apr 22, 2014·37 cites·14 claims
- 1596US10923023B1Stacked hybrid micro LED pixel architectureAPPLE INC·Filed 2016·Granted Feb 16, 2021·13 cites·23 claims
- 1696US10665578B2Display with embedded pixel driver chipsAPPLE INC·Filed 2018·Granted May 26, 2020·17 cites·10 claims
- 1796US10210920B1Magnetic tunnel junction (MTJ) devices with varied breakdown voltages in different memory arrays fabricated in a same semiconductor die to facilitate different memory applicationsQUALCOMM INC·Filed 2018·Granted Feb 19, 2019·25 cites·31 claims
- 1896US8543964B2Constraint optimization of sub-net level routing in asic designGE LIANG·Filed 2011·Granted Sep 24, 2013·91 cites·20 claims
- 1996US7885105B2Magnetic tunnel junction cell including multiple vertical magnetic domainsQUALCOMM INC·Filed 2008·Granted Feb 8, 2011·68 cites·24 claims
- 2096US7579197B1Method of forming a magnetic tunnel junction structureQUALCOMM INC·Filed 2008·Granted Aug 25, 2009·54 cites·20 claims
- 2195US11749180B2Local active matrix architectureAPPLE INC·Filed 2022·Granted Sep 5, 2023·2 cites·18 claims
- 2295USD949606SCabinetLI XIA·Filed 2021·Granted Apr 26, 2022·21 cites·1 claims
- 2395US10964017B2Deep learning for arterial analysis and assessmentGEN ELECTRIC·Filed 2018·Granted Mar 30, 2021·19 cites·12 claims
- 2495US10734384B1Vertically-integrated two-dimensional (2D) semiconductor slabs in complementary field effect transistor (CFET) cell circuits, and method of fabricatingQUALCOMM INC·Filed 2019·Granted Aug 4, 2020·11 cites·28 claims
- 2595US10424380B1Physically unclonable function (PUF) memory employing static random access memory (SRAM) bit cells with added passive resistance to enhance transistor imbalance for improved PUF output reproducibilityQUALCOMM INC·Filed 2018·Granted Sep 24, 2019·15 cites·31 claims
- 2695US10205018B1Planar double gate semiconductor deviceQUALCOMM INC·Filed 2017·Granted Feb 12, 2019·12 cites·28 claims
- 2795US10084074B1Compound semiconductor field effect transistor gate length scalingQUALCOMM INC·Filed 2017·Granted Sep 25, 2018·10 cites·14 claims
- 2895US9406689B2Logic finFET high-K/conductive gate embedded multiple time programmable flash memoryQUALCOMM INC·Filed 2013·Granted Aug 2, 2016·21 cites·7 claims
- 2995US9245610B2OTP cell with reversed MTJ connectionKIM JUNG PILL·Filed 2012·Granted Jan 26, 2016·18 cites·10 claims
- 3095US9136463B2Method of forming a magnetic tunnel junction structureLI XIA·Filed 2007·Granted Sep 15, 2015·37 cites·21 claims
- 3195US8674465B2MRAM device and integration techniques compatible with logic integrationLI XIA·Filed 2010·Granted Mar 18, 2014·22 cites·19 claims
- 3295US8455965B2Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctionsLI XIA·Filed 2009·Granted Jun 4, 2013·28 cites·14 claims
- 3395US8004881B2Magnetic tunnel junction device with separate read and write pathsQUALCOMM INC·Filed 2007·Granted Aug 23, 2011·37 cites·10 claims
- 3494USD1078931SFoam cannon for pressure washerLI XIA·Filed 2025·Granted Jun 10, 2025·3 cites·1 claims
- 3594US11533045B1Dynamic aging monitor and correction for critical path duty cycle and delay degradationQUALCOMM INC·Filed 2022·Granted Dec 20, 2022·4 cites·24 claims
- 3694US10043826B1Fully depleted silicon on insulator integrationQUALCOMM INC·Filed 2017·Granted Aug 7, 2018·9 cites·15 claims
- 3794US9576801B2High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memoryQUALCOMM INC·Filed 2014·Granted Feb 21, 2017·17 cites·24 claims
- 3894US9496314B1Shared source line magnetic tunnel junction (MTJ) bit cells employing uniform MTJ connection patterns for reduced areaQUALCOMM INC·Filed 2015·Granted Nov 15, 2016·12 cites·30 claims
- 3994US8580583B2Magnetic tunnel junction device and fabricationLEE KANGHO·Filed 2012·Granted Nov 12, 2013·12 cites·17 claims
- 4093US10431581B1Complementary metal-oxide semiconductor (CMOS) integration with compound semiconductor devicesQUALCOMM INC·Filed 2018·Granted Oct 1, 2019·8 cites·29 claims
- 4193US9620612B2Intergrated circuit devices including an interfacial dipole layerQUALCOMM INC·Filed 2015·Granted Apr 11, 2017·8 cites·12 claims
- 4293US9595662B2MRAM integration techniques for technology scalingQUALCOMM INC·Filed 2016·Granted Mar 14, 2017·8 cites·13 claims
- 4393US9372123B2Flexible temperature sensor including conformable electronicsMC10 INC·Filed 2014·Granted Jun 21, 2016·133 cites·48 claims
- 4493US8796046B2Methods of integrated shielding into MTJ device for MRAMQUALCOMM INC·Filed 2013·Granted Aug 5, 2014·14 cites·22 claims
- 4593US8644063B2Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctionsQUALCOMM INC·Filed 2013·Granted Feb 4, 2014·10 cites·16 claims
- 4693US8547736B2Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junctionRAO HARI M·Filed 2010·Granted Oct 1, 2013·19 cites·25 claims
- 4793US7781231B2Method of forming a magnetic tunnel junction deviceQUALCOMM INC·Filed 2008·Granted Aug 24, 2010·22 cites·20 claims
- 4892USD1051047SWireless magnetic car chargerLI XIA·Filed 2022·Granted Nov 12, 2024·14 cites·1 claims
- 4992US11689203B1Method and apparatus for symmetric aging of clock treesQUALCOMM INC·Filed 2022·Granted Jun 27, 2023·6 cites·20 claims
- 5092US10964380B1Integrated device comprising memory bitcells comprising shared preload line and shared activation lineQUALCOMM INC·Filed 2020·Granted Mar 30, 2021·3 cites·26 claims
Showing the top 50 of 453 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →