Inventor · disambiguated record
Xian Liu
Also filed as: LIU XIAN · LIU XIAN-JIE
63 granted patents·24 pending applications·492 citations·filing 2007–2024
98Inventor score
Top patents by PatentIndex Score
87 records- 0197US11316024B2Split-gate non-volatile memory cells with erase gates disposed over word line gates, and method of making sameSILICON STORAGE TECH INC·Filed 2021·Granted Apr 26, 2022·6 cites·8 claims
- 0297US7927994B1Split gate non-volatile flash memory cell having a floating gate, control gate, select gate and an erase gate with an overhang over the floating gate, array and method of manufacturingSILICON STORAGE TECH INC·Filed 2010·Granted Apr 19, 2011·73 cites·6 claims
- 0397US7868375B2Split gate non-volatile flash memory cell having a floating gate, control gate, select gate and an erase gate with an overhang over the floating gate, array and method of manufacturingSILICON STORAGE TECH INC·Filed 2009·Granted Jan 11, 2011·230 cites·2 claims
- 0496US11594453B2Method of forming a device with split gate non-volatile memory cells, HV devices having planar channel regions and FINFET logic devicesSILICON STORAGE TECH INC·Filed 2022·Granted Feb 28, 2023·3 cites·9 claims
- 0596US11315635B2Split-gate, 2-bit non-volatile memory cell with erase gate disposed over word line gate, and method of making sameSILICON STORAGE TECH INC·Filed 2021·Granted Apr 26, 2022·5 cites·13 claims
- 0696US9276005B1Non-volatile memory array with concurrently formed low and high voltage logic devicesSILICON STORAGE TECH INC·Filed 2014·Granted Mar 1, 2016·42 cites·9 claims
- 0795US10312247B1Two transistor FinFET-based split gate non-volatile floating gate flash memory and method of fabricationSILICON STORAGE TECH INC·Filed 2018·Granted Jun 4, 2019·18 cites·23 claims
- 0895US9634019B1Non-volatile split gate memory cells with integrated high K metal gate, and method of making sameSILICON STORAGE TECH INC·Filed 2016·Granted Apr 25, 2017·14 cites·8 claims
- 0993US10937794B2Split gate non-volatile memory cells with FinFET structure and HKMG memory and logic gates, and method of making sameSILICON STORAGE TECH INC·Filed 2018·Granted Mar 2, 2021·10 cites·22 claims
- 1091US11737266B2Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrateSILICON STORAGE TECH INC·Filed 2021·Granted Aug 22, 2023·2 cites·16 claims
- 1191US10468428B1Split gate non-volatile memory cells and logic devices with FinFET structure, and method of making sameSILICON STORAGE TECH INC·Filed 2018·Granted Nov 5, 2019·7 cites·9 claims
- 1291US9721958B2Method of forming self-aligned split-gate memory cell array with metal gates and logic devicesSILICON STORAGE TECH INC·Filed 2016·Granted Aug 1, 2017·7 cites·13 claims
- 1389US12511073B2Coarse and fine programming of non-volatile memory cellsSILICON STORAGE TECH INC·Filed 2024·Granted Dec 30, 2025·1 cites·18 claims
- 1489US11322507B2Method of making memory cells, high voltage devices and logic devices on a substrate with silicide on conductive blocksSILICON STORAGE TECH INC·Filed 2021·Granted May 3, 2022·2 cites·17 claims
- 1589US10217850B2Method of forming pairs of three-gate non-volatile flash memory cells using two polysilicon deposition stepsSILICON STORAGE TECH INC·Filed 2017·Granted Feb 26, 2019·7 cites·6 claims
- 1689US9293204B2Non-volatile memory cell with self aligned floating and erase gates, and method of making sameSILICON STORAGE TECH INC·Filed 2014·Granted Mar 22, 2016·12 cites·22 claims
- 1788US11646078B2Set-while-verify circuit and reset-while verify circuit for resistive random access memory cellsSILICON STORAGE TECH INC·Filed 2021·Granted May 9, 2023·1 cites·2 claims
- 1887US8785307B2Method of forming a memory cell by reducing diffusion of dopants under a gateLIU XIAN·Filed 2012·Granted Jul 22, 2014·9 cites·10 claims
- 1986US10797142B2FinFET-based split gate non-volatile flash memory with extended source line FinFET, and method of fabricationSILICON STORAGE TECH INC·Filed 2018·Granted Oct 6, 2020·4 cites·13 claims
- 2086US10692548B2Address fault detection in a flash memory systemSILICON STORAGE TECH INC·Filed 2019·Granted Jun 23, 2020·3 cites·20 claims
- 2184US11968829B2Method of forming memory cells, high voltage devices and logic devices on a semiconductor substrateSILICON STORAGE TECH INC·Filed 2022·Granted Apr 23, 2024·1 cites·8 claims
- 2284US10658027B2High density split-gate memory cellSILICON STORAGE TECH INC·Filed 2016·Granted May 19, 2020·6 cites·7 claims
- 2384US10644139B2Method of making split gate non-volatile flash memory cellSILICON STORAGE TECH INC·Filed 2019·Granted May 5, 2020·2 cites·2 claims
- 2483US11315940B2Method of forming a device with planar split gate non-volatile memory cells, high voltage devices and FinFET logic devicesSILICON STORAGE TECH INC·Filed 2021·Granted Apr 26, 2022·1 cites·10 claims
- 2580US10727240B2Split gate non-volatile memory cells with three-dimensional FinFET structureSILICON STORAGE TECH INC·Filed 2018·Granted Jul 28, 2020·2 cites·14 claims
- 2679US10790292B2Method of making embedded memory device with silicon-on-insulator substrateSILICON STORAGE TECH INC·Filed 2018·Granted Sep 29, 2020·2 cites·5 claims
- 2778US11114451B1Method of forming a device with FinFET split gate non-volatile memory cells and FinFET logic devicesSILICON STORAGE TECH INC·Filed 2020·Granted Sep 7, 2021·1 cites·18 claims
- 2878US11081553B2Method of forming split gate memory cellsSILICON STORAGE TECH INC·Filed 2020·Granted Aug 3, 2021·1 cites·11 claims
- 2978US10755779B2Architectures and layouts for an array of resistive random access memory cells and read and write methods thereofSILICON STORAGE TECH INC·Filed 2017·Granted Aug 25, 2020·1 cites·1 claims
- 3077US10615270B2Method of making split gate non-volatile flash memory cellSILICON STORAGE TECH INC·Filed 2019·Granted Apr 7, 2020·1 cites·4 claims
- 3176US9959927B2Multi-step voltage for forming resistive access memory (RRAM) cell filamentSILICON STORAGE TECH INC·Filed 2017·Granted May 1, 2018·4 cites·32 claims
- 3276US2023238453A1Method of forming pairs of three-gate non-volatile flash memory cells using two polysilicon deposition stepsSILICON STORAGE TECH INC·Filed 2023·Application pending·0 cites
- 3374US10879252B2Non-volatile memory cells with floating gates in dedicated trenchesSILICON STORAGE TECH INC·Filed 2018·Granted Dec 29, 2020·2 cites·25 claims
- 3473US9673208B2Method of forming memory array and logic devicesSILICON STORAGE TECH INC·Filed 2016·Granted Jun 6, 2017·2 cites·20 claims
- 3572US10644012B2Method of making split gate non-volatile memory cells with three-dimensional FinFET structure, and method of making sameSILICON STORAGE TECH INC·Filed 2019·Granted May 5, 2020·1 cites·14 claims
- 3671US2023189520A1Split gate non-volatile memory cells, hv and logic devices with finfet structures, and method of making sameSILICON STORAGE TECH INC·Filed 2023·Application pending·0 cites
- 3770US11652162B2Method of forming a three-gate non-volatile flash memory cell using two polysilicon deposition stepsSILICON STORAGE TECH INC·Filed 2020·Granted May 16, 2023·0 cites·6 claims
- 3868US8559228B2Non-volatile memory device with plural reference cells, and method of setting the reference cellsLIU XIAN·Filed 2010·Granted Oct 15, 2013·3 cites·8 claims
- 3967US2025344382A1Semiconductor device and method with memory cells having coupling gate self-aligned to floating gateSILICON STORAGE TECH INC·Filed 2024·Application pending·0 cites
- 4067US2025351745A1Method of forming resistive random access memory (rram) cellsSILICON STORAGE TECH INC·Filed 2024·Application pending·0 cites
- 4165US10833178B2Method of making split gate non-volatile flash memory cellSILICON STORAGE TECH INC·Filed 2019·Granted Nov 10, 2020·0 cites·2 claims
- 4265US10833179B2Method of making split gate non-volatile flash memory cellSILICON STORAGE TECH INC·Filed 2019·Granted Nov 10, 2020·0 cites·2 claims
- 4363US11621335B2Method of making split-gate non-volatile memory cells with erase gates disposed over word line gatesSILICON STORAGE TECH INC·Filed 2022·Granted Apr 4, 2023·0 cites·8 claims
- 4462US2025359046A1Split-gate non-volatile memory array with bidirectional operationSILICON STORAGE TECH INC·Filed 2024·Application pending·0 cites
- 4561US11183506B2Method of making embedded memory device with silicon-on-insulator substrateSILICON STORAGE TECH INC·Filed 2020·Granted Nov 23, 2021·0 cites·6 claims
- 4661US10431265B2Address fault detection in a flash memory systemSILICON STORAGE TECH INC·Filed 2017·Granted Oct 1, 2019·1 cites·55 claims
- 4760US8054738B2Touch panel, method for driving same, and display device using the sameINNOCOM TECH SHENZHEN CO LTD·Filed 2008·Granted Nov 8, 2011·1 cites·20 claims
- 4860US2025344410A1Multi-level resistive random access memory (rram) cellsSILICON STORAGE TECH INC·Filed 2024·Application pending·0 cites
- 4960US2025194086A1Method of making memory cells, transistor devices and logic devices on silicon-on-insulator substrateSILICON STORAGE TECH INC·Filed 2024·Application pending·0 cites
- 5060US2025234535A1Vertically oriented split gate non-volatile memory cells, and method of making sameSILICON STORAGE TECH INC·Filed 2024·Application pending·0 cites
Showing the top 50 of 87 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →