Inventor · disambiguated record
Xiaoye Qin
Also filed as: QIN XIAOYE
3 granted patents·4 pending applications·0 citations·filing 2016–2023
44Inventor score
Top patents by PatentIndex Score
7 records- 0160US11081590B2Metal oxide semiconductor field effect transistor with crystalline oxide layer on a III-V materialSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 3, 2021·0 cites·8 claims
- 0253US10475930B2Method of forming crystalline oxides on III-V materialsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 12, 2019·0 cites·7 claims
- 0351US2025113600A1Metal gate cut with reduced oxidation and parasitic capacitanceINTEL CORP·Filed 2023·Application pending·0 cites
- 0450US2024332071A1Plasma enhanced atomic layer deposition of dielectric material upon oxidizable materialINTEL CORP·Filed 2023·Application pending·0 cites
- 0549US2025210356A1Gate terminal methods and structuresJAGOO ZAFRULLAH·Filed 2023·Application pending·0 cites
- 0646US2023369509A1Doping contacts of thin film transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 0745US12439627B2Gate structures to enable lower subthreshold slope in gallium nitride-based transistorsINTEL CORP·Filed 2021·Granted Oct 7, 2025·0 cites·25 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →