Inventor · disambiguated record
Xiaowei Tian
Also filed as: TIAN XIAOWEI
17 granted patents·5 pending applications·170 citations·filing 1997–2024
93Inventor score
Top patents by PatentIndex Score
22 records- 0189USD1067301SSurveillance cameraTIAN XIAOWEI·Filed 2023·Granted Mar 18, 2025·13 cites·1 claims
- 0285USD1036532SSurveillance cameraTIAN XIAOWEI·Filed 2023·Granted Jul 23, 2024·10 cites·1 claims
- 0383USD1053926SSolar monitoring cameraTIAN XIAOWEI·Filed 2023·Granted Dec 10, 2024·8 cites·1 claims
- 0478USD1065292SSurveillance cameraTIAN XIAOWEI·Filed 2023·Granted Mar 4, 2025·6 cites·1 claims
- 0578US6100153AReliable diffusion resistor and diffusion capacitorIBM·Filed 1998·Granted Aug 8, 2000·43 cites·2 claims
- 0668US6097068ASemiconductor device fabrication method and apparatus using connecting implantsIBM·Filed 1998·Granted Aug 1, 2000·31 cites·5 claims
- 0767US8754455B2Junction field effect transistor structure with P-type silicon germanium or silicon germanium carbide gate(s) and method of forming the structureLIU XUEFENG·Filed 2011·Granted Jun 17, 2014·2 cites·19 claims
- 0861US5972745AMethod or forming self-aligned halo-isolated wellsIBM·Filed 1997·Granted Oct 26, 1999·25 cites·19 claims
- 0960US2025070242A1Copolymer electrolyte, preparation method thereof and solid-state lithium secondary batteriesEVONIK OPERATIONS GMBH·Filed 2022·Application pending·0 cites
- 1058US2025079512A1Comb-branched polymer/silica nanoparticles hybrid polymer electrolytes for solid-state lithium metal secondary batteriesEVONIK OPERATIONS GMBH·Filed 2021·Application pending·0 cites
- 1156US2025337008A1Solid polymer electrolytes for solid-state lithium metal secondary batteriesEVONIK OPERATIONS GMBH·Filed 2021·Application pending·0 cites
- 1254US6838323B2Diffusion resistor/capacitor (DRC) non-aligned MOSFET structureIBM·Filed 2003·Granted Jan 4, 2005·5 cites·13 claims
- 1353US8921172B2Junction field effect transistor structure with P-type silicon germanium or silicon germanium carbide gate(s) and method of forming the structureIBM·Filed 2014·Granted Dec 30, 2014·0 cites·20 claims
- 1453US8779476B2Asymmetric wedge JFET, related method and design structureIBM·Filed 2013·Granted Jul 15, 2014·0 cites·17 claims
- 1551US6057204AMethod of making a noise-isolated buried resistor by implanting a first well with a mask and then implanting an opposite conductivity well with a larger opening in the maskIBM·Filed 1999·Granted May 2, 2000·11 cites·4 claims
- 1649USD1104109SSurveillance cameraSHENZHEN TIANUO ANFANG CO LTD·Filed 2024·Granted Dec 2, 2025·0 cites·1 claims
- 1749USD1104108SSurveillance cameraSHENZHEN TIANUO ANFANG CO LTD·Filed 2024·Granted Dec 2, 2025·0 cites·1 claims
- 1848US8481380B2Asymmetric wedge JFET, related method and design structureLIU XUEFENG·Filed 2010·Granted Jul 9, 2013·0 cites·9 claims
- 1944US6057184ASemiconductor device fabrication method using connecting implantsIBM·Filed 1997·Granted May 2, 2000·10 cites·11 claims
- 2041US5883566ANoise-isolated buried resistorIBM·Filed 1997·Granted Mar 16, 1999·6 cites·33 claims
- 2130US2002060343A1Diffusion resistor/capacitor (drc) non-aligned mosfet structureFiled 1999·Application pending·0 cites
- 2229US2001011758A1Method and device to increase latch-up immunity in cmos deviceFiled 1998·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Xiaowei Tian files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →