Inventor · disambiguated record
Xiangning Wang
Also filed as: WANG XIANGNING
11 granted patents·6 pending applications·1 citations·filing 2019–2025
80Inventor score
Top patents by PatentIndex Score
17 records- 0182US12310025B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Granted May 20, 2025·0 cites·20 claims
- 0280US11950418B2Method and structure for forming stairs in three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Apr 2, 2024·1 cites·20 claims
- 0377US2025254877A1Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORYY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0472US2025038046A1Methods for forming stairs in three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0571US12495555B2Method and structure for forming stairs in three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Dec 9, 2025·0 cites·20 claims
- 0671US12469714B2Gateline mask design for removing sacrificial gateline polysilicon within stair step areaYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Nov 11, 2025·0 cites·20 claims
- 0769US11950419B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Apr 2, 2024·0 cites·19 claims
- 0865US2023301106A1Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 0961US12021126B2Method of forming top select gate trenchesYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jun 25, 2024·0 cites·7 claims
- 1061US11711921B2Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jul 25, 2023·0 cites·18 claims
- 1160US2025159881A1Merging schemes in semiconductive devicesYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1259US12148655B2Methods for forming stairs in three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Nov 19, 2024·0 cites·20 claims
- 1358US11552097B2Method and structure for forming stairs in three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jan 10, 2023·0 cites·16 claims
- 1455US2025158802A1Privacy-preserving neural network model and privacy-preserving prediction using the privacy-preserving neural network modelUNIV NANYANG TECH·Filed 2023·Application pending·0 cites
- 1551US2024170389A1Three-dimensional memory devices and system having the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 1650US12048153B2Vertical memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·10 claims
- 1746US12193229B2Semiconductor device fabricationYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →