Inventor · disambiguated record
Xiaojun Weng
Also filed as: WENG XIAOJUN
3 granted patents·1 pending application·18 citations·filing 2003–2022
58Inventor score
Top patents by PatentIndex Score
4 records- 0162US7056815B1Narrow energy band gap gallium arsenide nitride semi-conductors and an ion-cut-synthesis method for producing the sameUNIV MICHIGAN·Filed 2003·Granted Jun 6, 2006·18 cites·22 claims
- 0257US12490460B2Dielectric sidewall features for tuning thin film transistor (TFT) parasiticsINTEL CORP·Filed 2022·Granted Dec 2, 2025·0 cites·20 claims
- 0351US11652143B2III-N transistors integrated with thin-film transistors having graded dopant concentrations and/or composite gate dielectricsINTEL CORP·Filed 2019·Granted May 16, 2023·0 cites·24 claims
- 0447US2023369508A1Multi-layered or graded semiconductor region in thin film transistor (tft) structuresINTEL CORP·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →