Inventor · disambiguated record
Xiaoju Wu
Also filed as: HOU FAN-CHI · WU XIAOJU
47 granted patents·9 pending applications·197 citations·filing 2001–2024
97Inventor score
Top patents by PatentIndex Score
56 records- 0195US10461182B1Drain centered LDMOS transistor with integrated dummy patternsTEXAS INSTRUMENTS INC·Filed 2018·Granted Oct 29, 2019·16 cites·21 claims
- 0293US11094817B2Drain extended NMOS transistorTEXAS INSTRUMENTS INC·Filed 2020·Granted Aug 17, 2021·3 cites·20 claims
- 0389US7598547B2Low noise vertical variable gate control voltage JFET device in a BiCMOS process and methods to build this deviceTEXAS INSTRUMENTS INC·Filed 2006·Granted Oct 6, 2009·18 cites·1 claims
- 0488US7348228B2Deep buried channel junction field effect transistor (DBCJFET)TEXAS INSTRUMENTS INC·Filed 2006·Granted Mar 25, 2008·17 cites·20 claims
- 0587US9099523B2ESD protection circuit with isolated SCR for negative voltage operationTEXAS INSTRUMENTS INC·Filed 2012·Granted Aug 4, 2015·6 cites·8 claims
- 0687US7919368B2Area-efficient electrically erasable programmable memory cellTEXAS INSTRUMENTS INC·Filed 2009·Granted Apr 5, 2011·13 cites·7 claims
- 0787US7893768B2Automatic gain controlTEXAS INSTRUMENTS INC·Filed 2009·Granted Feb 22, 2011·17 cites·20 claims
- 0881US6730962B2Method of manufacturing and structure of semiconductor device with field oxide structureTEXAS INSTRUMENTS INC·Filed 2001·Granted May 4, 2004·27 cites·10 claims
- 0980US8581324B2Area-efficient electrically erasable programmable memory cellWU XIAOJU·Filed 2011·Granted Nov 12, 2013·5 cites·12 claims
- 1078US12057443B2ESD protection circuit with isolated SCR for negative voltage operationTEXAS INSTRUMENTS INC·Filed 2022·Granted Aug 6, 2024·0 cites·17 claims
- 1178US7018880B2Method for manufacturing a MOS transistor having reduced 1/f noiseTEXAS INSTRUMENTS INC·Filed 2003·Granted Mar 28, 2006·26 cites·19 claims
- 1277US10580890B2Drain extended NMOS transistorTEXAS INSTRUMENTS INC·Filed 2017·Granted Mar 3, 2020·2 cites·20 claims
- 1377US7402874B2One time programmable EPROM fabrication in STI CMOS technologyTEXAS INSTRUMENTS INC·Filed 2005·Granted Jul 22, 2008·7 cites·20 claims
- 1475US11152505B2Drain extended transistorTEXAS INSTRUMENTS INC·Filed 2018·Granted Oct 19, 2021·2 cites·24 claims
- 1570US11296075B2High reliability polysilicon componentsTEXAS INSTRUMENTS INC·Filed 2018·Granted Apr 5, 2022·1 cites·21 claims
- 1669US8114744B2Methods for reducing gate dielectric thinning on trench isolation edges and integrated circuits therefromCHATTERJEE AMITAVA·Filed 2008·Granted Feb 14, 2012·5 cites·17 claims
- 1767US11916067B2High reliability polysilicon componentsTEXAS INSTRUMENTS INC·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 1866US7785906B2Method to detect poly residues in LOCOS processTEXAS INSTRUMENTS INC·Filed 2007·Granted Aug 31, 2010·2 cites·19 claims
- 1963US10347732B1Semiconductor device with extended electrically-safe operating areaTEXAS INSTRUMENTS INC·Filed 2019·Granted Jul 9, 2019·0 cites·15 claims
- 2063US2025120169A1Shallow trench isolation processing with local oxidation of siliconTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 2162US11302688B2ESD protection circuit with isolated SCR for negative voltage operationTEXAS INSTRUMENTS INC·Filed 2018·Granted Apr 12, 2022·0 cites·23 claims
- 2262US11049852B2ESD protection circuit with isolated SCR for negative voltage operationTEXAS INSTRUMENTS INC·Filed 2018·Granted Jun 29, 2021·0 cites·18 claims
- 2362US7745274B2Gate self aligned low noise JFETTEXAS INSTRUMENTS INC·Filed 2007·Granted Jun 29, 2010·2 cites·22 claims
- 2461US10326014B2Semiconductor device with extended electrically-safe operating areaTEXAS INSTRUMENTS INC·Filed 2018·Granted Jun 18, 2019·0 cites·15 claims
- 2561US8067795B2Single poly EEPROM without separate control gate nor erase regionsMITROS JOZEF CZESLAW·Filed 2007·Granted Nov 29, 2011·3 cites·27 claims
- 2660US7112953B2Method for detecting epitaxial (EPI) induced buried layer shifts in semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2005·Granted Sep 26, 2006·1 cites·31 claims
- 2760US2025313526A1Pyrethroid compound containing double bonds and cyano groups, synthesis method therefor, and application thereofJIANGSU YANGNONG CHEMICAL CO·Filed 2023·Application pending·0 cites
- 2859US10014405B1Semiconductor device with extended electrically-safe operating areaTEXAS INSTRUMENTS INC·Filed 2017·Granted Jul 3, 2018·0 cites·15 claims
- 2958US10879387B2Drain centered LDMOS transistor with integrated dummy patternsTEXAS INSTRUMENTS INC·Filed 2019·Granted Dec 29, 2020·0 cites·17 claims
- 3057US6790736B2Method for manufacturing and structure of semiconductor device with polysilicon definition structureTEXAS INSTRUMENTS INC·Filed 2001·Granted Sep 14, 2004·6 cites·10 claims
- 3155US10505037B2P-channel DEMOS deviceTEXAS INSTRUMENTS INC·Filed 2018·Granted Dec 10, 2019·0 cites·18 claims
- 3255US10083951B2ESD protection circuit with isolated SCR for negative voltage operationTEXAS INSTRUMENTS INC·Filed 2015·Granted Sep 25, 2018·0 cites·12 claims
- 3354US10090299B2MOSFET transistors with robust subthreshold operationsTEXAS INSTRUMENTS INC·Filed 2018·Granted Oct 2, 2018·0 cites·20 claims
- 3454US7244651B2Fabrication of an OTP-EPROM having reduced leakage currentTEXAS INSTRUMENTS INC·Filed 2003·Granted Jul 17, 2007·6 cites·23 claims
- 3553US12199091B2Shallow trench isolation processing with local oxidation of siliconTEXAS INSTRUMENTS INC·Filed 2021·Granted Jan 14, 2025·0 cites·22 claims
- 3651US9899376B2MOSFET transistors with robust subthreshold operationsTEXAS INSTRUMENTS INC·Filed 2016·Granted Feb 20, 2018·0 cites·20 claims
- 3749US7307309B2EEPROM with etched tunneling windowTEXAS INSTRUMENTS INC·Filed 2004·Granted Dec 11, 2007·4 cites·22 claims
- 3849US7164160B2Integrated circuit device with a vertical JFETTEXAS INSTRUMENTS INC·Filed 2003·Granted Jan 16, 2007·3 cites·10 claims
- 3949US6870242B2Method for manufacturing and structure of semiconductor device with polysilicon definition structureTEXAS INSTRUMENTS INC·Filed 2003·Granted Mar 22, 2005·3 cites·10 claims
- 4049US2008283966A1High Density Capacitor Using Topographic SurfaceTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 4148US9947783B2P-channel DEMOS deviceTEXAS INSTRUMENTS INC·Filed 2016·Granted Apr 17, 2018·0 cites·8 claims
- 4247US8125830B2Area-efficient electrically erasable programmable memory cellWU XIAOJU·Filed 2011·Granted Feb 28, 2012·0 cites·1 claims
- 4347US6885054B1Threshold voltage stabilizer, method of manufacturing and integrated circuit employing the sameTEXAS INSTRUMENTS INC·Filed 2004·Granted Apr 26, 2005·2 cites·25 claims
- 4442US11374124B2Protection of drain extended transistor field oxideTEXAS INSTRUMENTS INC·Filed 2018·Granted Jun 28, 2022·0 cites·16 claims
- 4542US6921701B2Method of manufacturing and structure of semiconductor device (DEMOS) with field oxide structureTEXAS INSTRUMENTS INC·Filed 2004·Granted Jul 26, 2005·0 cites·9 claims
- 4642US2010264466A1Gate self-aligned low noise jfetTEXAS INSTRUMENTS INC·Filed 2010·Application pending·0 cites
- 4739US8859791B2Process for producing an alkylene oxide by olefin epoxidationLI HUA·Filed 2011·Granted Oct 14, 2014·0 cites·9 claims
- 4839US7687856B2Body bias to facilitate transistor matchingTEXAS INSTRUMENTS INC·Filed 2007·Granted Mar 30, 2010·0 cites·12 claims
- 4938US9221039B2Catalyst and the preparation process thereof and a process for epoxidising olefinLIN MIN·Filed 2011·Granted Dec 29, 2015·0 cites·18 claims
- 5037US10498326B2Output driver with power down protectionTEXAS INSTRUMENTS INC·Filed 2016·Granted Dec 3, 2019·0 cites·16 claims
Showing the top 50 of 56 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →