Inventor · disambiguated record
Xinyun Xie
Also filed as: XIE XINYUN
14 granted patents·2 pending applications·30 citations·filing 2011–2019
87Inventor score
Files withSEMICONDUCTOR MFG INT SHANGHAI CORP11SEMICONDUCTOR MFG INT BEIJING CORP2HUANG XIAOLU1SEMICONDUCTOR MFG INT SHANGHAI1SHANGHAI HUALI MICROELECT CORP1
Top patents by PatentIndex Score
16 records- 0192US9634087B1FinFET and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Apr 25, 2017·10 cites·16 claims
- 0291US9799676B2Semiconductor device, FinFET transistor and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Oct 24, 2017·8 cites·14 claims
- 0390US9923065B2Fabricating method of fin-type semiconductor deviceSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2016·Granted Mar 20, 2018·6 cites·12 claims
- 0477US9502403B2Method for core and in/out-put device reliability improve at high-K last processSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2014·Granted Nov 22, 2016·4 cites·14 claims
- 0568US10381464B2Method for manufacturing semiconductor deviceSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2018·Granted Aug 13, 2019·1 cites·7 claims
- 0666US9673325B2FinFET device having a material formed on reduced source/drain region and method of forming the sameSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Jun 6, 2017·1 cites·14 claims
- 0757US10957785B2Method for manufacturing semiconductor deviceSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2019·Granted Mar 23, 2021·0 cites·5 claims
- 0856US10312333B2Fin-type semiconductor deviceSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2018·Granted Jun 4, 2019·0 cites·13 claims
- 0953US10134761B2Semiconductor device and FinFET transistorSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted Nov 20, 2018·0 cites·12 claims
- 1051US9985015B2Semiconductor device having improved core and input/output device reliabilitySEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted May 29, 2018·0 cites·3 claims
- 1150US10290724B2FinFET devices having a material formed on reduced source/drain regionSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted May 14, 2019·0 cites·20 claims
- 1243US9184170B2Method for FinFET SRAM ratio tuningSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Nov 10, 2015·0 cites·12 claims
- 1340US9899380B2FINFET structure and method of forming sameSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Feb 20, 2018·0 cites·6 claims
- 1438US2013181279A1Sonos structure and manufacturing method thereofSHANGHAI HUALI MICROELECT CORP·Filed 2012·Application pending·0 cites
- 1536US9472668B2Semiconductor device and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Oct 18, 2016·0 cites·22 claims
- 1631US2013049119A1Multi-working voltages cmos device with single gate oxide layer thickness and manufacturing method thereofHUANG XIAOLU·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →