Inventor · disambiguated record
Xiangnan Zhao
Also filed as: ZHAO XIANGNAN
29 granted patents·21 pending applications·15 citations·filing 2019–2025
93Inventor score
Files withYANGTZE MEMORY TECH CO LTD50
Top patents by PatentIndex Score
50 records- 0195US10991438B1Method and memory used for reducing program disturbance by adjusting voltage of dummy word lineYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Apr 27, 2021·7 cites·20 claims
- 0292US11710529B2Three-dimensional memory device programming with reduced disturbanceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jul 25, 2023·2 cites·22 claims
- 0390US11901023B2Architecture and method for NAND memory operationYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Feb 13, 2024·1 cites·20 claims
- 0489US10957409B1Method of performing programming operation and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Mar 23, 2021·3 cites·20 claims
- 0586US2025299754A1Architecture and method for nand memory operationYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0686US2025273277A1Memory including a plurality of portions and used for reducing program disturbance and program method thereofYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0778US2024096428A1Memory including a plurality of portions and used for reducing program disturbance and program method thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 0877US11875862B2Memory including a plurality of portions and used for reducing program disturbance and program method thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Jan 16, 2024·0 cites·20 claims
- 0976US12437816B2Memory, a memory system, and a method for operating memoryYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·19 claims
- 1074US11848058B2Method and memory used for reducing program disturbance by adjusting voltage of dummy word lineYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Dec 19, 2023·0 cites·20 claims
- 1174US2024062837A1Method and memory used for reducing program disturbance by adjusting voltage of dummy word lineYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1274US2024411458A1Memory device, memory system, and program operation method thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1373US12176043B2Three-dimensional memory device programming with reduced disturbanceYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 1472US11594288B2Memory including a plurality of portions and used for reducing program disturbance and program method thereofYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Feb 28, 2023·0 cites·20 claims
- 1572US11568941B2Memory including a plurality of portions and used for reducing program disturbance and program method thereofYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jan 31, 2023·0 cites·14 claims
- 1672US10943665B1Method of programming and verifying memory device and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Mar 9, 2021·2 cites·15 claims
- 1771US12437813B2Method of reducing program operation time in 3D NAND memory systemsYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·13 claims
- 1871US12093535B2Memory device, memory system, and program operation method thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Sep 17, 2024·0 cites·20 claims
- 1970US12499949B2Memory devices and operating methods thereof, memory systemsYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Dec 16, 2025·0 cites·20 claims
- 2068US11468957B2Architecture and method for NAND memory operationYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Oct 11, 2022·0 cites·6 claims
- 2168US11195590B2Memory including a plurality of portions and used for reducing program disturbance and program method thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Dec 7, 2021·0 cites·5 claims
- 2268US2025140329A1Memory device, memory system, and read operation method thereofYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 2367US11626170B2Method and memory used for reducing program disturbance by adjusting voltage of dummy word lineYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Apr 11, 2023·0 cites·20 claims
- 2464US11423995B2Three-dimensional memory device programming with reduced disturbanceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 23, 2022·0 cites·20 claims
- 2561US12451188B2Memory programming method, memory device, and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 2661US12237025B2Memory device, memory system, and program operation method thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·20 claims
- 2761US12230342B2Memory device, memory system, and read operation method thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Feb 18, 2025·0 cites·20 claims
- 2860US2025357222A1Test device, wafer and test methodYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 2959US11398284B2Method of performing programming operation and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jul 26, 2022·0 cites·20 claims
- 3058US11721403B2Method of programming and verifying memory device and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·16 claims
- 3156US12211555B2Memory device, memory system, and program method thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 3255US11864379B2Three-dimensional memory and control method thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jan 2, 2024·0 cites·14 claims
- 3355US2025383785A1Memory device and program operation thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 3454US2025378881A1Memory devices, methods for operating memory devices and memory systemsYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 3553US2025191664A1Operation method of memory, memory, and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 3652US2025329394A1Memory devices and operation methods thereof, and memory systemsYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 3751US2025285679A1Memory device and operation method thereof, memory systemYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 3850US2025273270A1Memory devices, memory systems, and operation methodsYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 3950US2025364060A1Memory device, memory system, and method of operating the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 4050US2025111879A1Program operations in memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 4149US2025174277A1Memory device and program operation thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 4248US2025291508A1Memory device and operation method thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 4347US12216907B2Method of improving programming operations in 3D NAND systemsYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Feb 4, 2025·0 cites·20 claims
- 4447US2023238067A1Method of programming and verifying memory device and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 4546US12170114B2Three-dimensional memory device and method for reading the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Dec 17, 2024·0 cites·10 claims
- 4646US2024304248A1Memory programmingYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 4746US2025068558A1Method for operating a memory, a memory and a memory systemYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 4845US12165716B2Method of performing programming operation and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Dec 10, 2024·0 cites·19 claims
- 4944US11670373B2Three-dimensional memory device programming with reduced threshold voltage shiftYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 5042US2025329388A1Memory, operation method of memory, and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →