Inventor · disambiguated record
Xueping Xu
Also filed as: XU XUEPING
43 granted patents·6 pending applications·2,236 citations·filing 1995–2024
98Inventor score
Top patents by PatentIndex Score
49 records- 0199US6445006B1Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making sameADVANCED TECH MATERIALS·Filed 1999·Granted Sep 3, 2002·522 cites·55 claims
- 0298US6488767B1High surface quality GaN wafer and method of fabricating sameADVANCED TECH MATERIALS·Filed 2001·Granted Dec 3, 2002·209 cites·51 claims
- 0398US5973444ACarbon fiber-based field emission devicesADVANCED TECH MATERIALS·Filed 1998·Granted Oct 26, 1999·334 cites·52 claims
- 0497US6951695B2High surface quality GaN wafer and method of fabricating sameCREE INC·Filed 2002·Granted Oct 4, 2005·115 cites·91 claims
- 0596US10793972B1High quality silicon carbide crystals and method of making the sameII VI DELAWARE INC·Filed 2018·Granted Oct 6, 2020·15 cites·18 claims
- 0696US7170095B2Semi-insulating GaN and method of making the sameCREE INC·Filed 2003·Granted Jan 30, 2007·113 cites·112 claims
- 0796US6447604B1Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devicesADVANCED TECH MATERIALS·Filed 2000·Granted Sep 10, 2002·306 cites·73 claims
- 0896US5872422ACarbon fiber-based field emission devicesADVANCED TECH MATERIALS·Filed 1995·Granted Feb 16, 1999·259 cites·76 claims
- 0995US7777217B2Inclusion-free uniform semi-insulating group III nitride substrate and methods for making sameKYMA TECHNOLOGIES INC·Filed 2006·Granted Aug 17, 2010·22 cites·10 claims
- 1094US9090989B2Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereofII VI INC·Filed 2013·Granted Jul 28, 2015·8 cites·21 claims
- 1193US7897490B2Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancementKYMA TECHNOLOGIES INC·Filed 2006·Granted Mar 1, 2011·16 cites·26 claims
- 1292US7879147B2Large area, uniformly low dislocation density GaN substrate and process for making the sameCREE INC·Filed 2007·Granted Feb 1, 2011·14 cites·26 claims
- 1392US7118813B2Vicinal gallium nitride substrate for high quality homoepitaxyCREE INC·Filed 2003·Granted Oct 10, 2006·42 cites·29 claims
- 1489US9263266B2Group III nitride articles and methods for making sameKYMA TECHNOLOGIES INC·Filed 2015·Granted Feb 16, 2016·4 cites·22 claims
- 1589US8349711B2Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancementKYMA TECHNOLOGIES INC·Filed 2011·Granted Jan 8, 2013·6 cites·18 claims
- 1688US7390581B2Vicinal gallium nitride substrate for high quality homoepitaxyCREE INC·Filed 2006·Granted Jun 24, 2008·9 cites·35 claims
- 1787US8435879B2Method for making group III nitride articlesHANSER ANDREW D·Filed 2006·Granted May 7, 2013·12 cites·12 claims
- 1887US7097707B2GaN boule grown from liquid melt using GaN seed wafersCREE INC·Filed 2002·Granted Aug 29, 2006·31 cites·47 claims
- 1986US2024150931A1Large diameter silicon carbide single crystals and apparatus and method of manufacture thereofII VI ADVANCED MAT LLC·Filed 2024·Application pending·0 cites
- 2083US7323256B2Large area, uniformly low dislocation density GaN substrate and process for making the sameCREE INC·Filed 2003·Granted Jan 29, 2008·19 cites·50 claims
- 2182US8562937B2Production of carbon nanotubesCARRUTHERS J DONALD·Filed 2006·Granted Oct 22, 2013·6 cites·26 claims
- 2282US8212259B2III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substratesFLYNN JEFFREY S·Filed 2002·Granted Jul 3, 2012·22 cites·72 claims
- 2382US6031250AIntegrated circuit devices and methods employing amorphous silicon carbide resistor materialsADVANCED TECH MATERIALS·Filed 1995·Granted Feb 29, 2000·57 cites·40 claims
- 2481US8202793B2Inclusion-free uniform semi-insulating group III nitride substrates and methods for making samePREBLE EDWARD A·Filed 2010·Granted Jun 19, 2012·4 cites·12 claims
- 2580US11035054B2Large diameter silicon carbide single crystals and apparatus and method of manufacture thereofII VI DELAWARE INC·Filed 2019·Granted Jun 15, 2021·2 cites·4 claims
- 2679US9082890B1Group III nitride articles having nucleation layers, transitional layers, and bulk layersKYMA TECHNOLOGIES INC·Filed 2013·Granted Jul 14, 2015·2 cites·18 claims
- 2779US8741413B2Large diameter, high quality SiC single crystals, method and apparatusII VI INC·Filed 2013·Granted Jun 3, 2014·4 cites·27 claims
- 2878US6379210B2Fabrication of electron emitters coated with material such as carbonCANDESCENT TECHNOLOGIES COPORA·Filed 2000·Granted Apr 30, 2002·13 cites·54 claims
- 2977US11905618B2Large diameter silicon carbide single crystals and apparatus and method of manufacture thereofII VI DELAWARE INC·Filed 2021·Granted Feb 20, 2024·0 cites·17 claims
- 3076US7972711B2Large area, uniformly low dislocation density GaN substrate and process for making the sameCREE INC·Filed 2008·Granted Jul 5, 2011·3 cites·28 claims
- 3173US8637848B2Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancementKYMA TECHNOLOGIES INC·Filed 2012·Granted Jan 28, 2014·1 cites·10 claims
- 3273US6617772B1Flat-panel display having spacer with rough face for inhibiting secondary electron escapeCANDESCENT TECH CORP·Filed 1998·Granted Sep 9, 2003·22 cites·182 claims
- 3370USRE46315ELarge diameter, high quality SiC single crystals, method and apparatusII VI INC·Filed 2014·Granted Feb 21, 2017·2 cites·27 claims
- 3469US8043731B2Vicinal gallium nitride substrate for high quality homoepitaxyCREE INC·Filed 2010·Granted Oct 25, 2011·1 cites·23 claims
- 3567US7700203B2Vicinal gallium nitride substrate for high quality homoepitaxyCREE INC·Filed 2008·Granted Apr 20, 2010·1 cites·20 claims
- 3667US2017321345A1Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture ThereofII VI INC·Filed 2017·Application pending·0 cites
- 3763US7090554B1Fabrication of flat-panel display having spacer with rough face for inhibiting secondary electron escapeADVANCED TECH MATERIALS·Filed 2003·Granted Aug 15, 2006·4 cites·37 claims
- 3862USRE48378EVanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereofII VI DELAWARE INC·Filed 2017·Granted Jan 5, 2021·0 cites·28 claims
- 3962US6356014B2Electron emitters coated with carbon containing layerCANDESCENT TECH CORP·Filed 1997·Granted Mar 12, 2002·12 cites·68 claims
- 4061US8871556B2Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancementKYMA TECHNOLOGIES INC·Filed 2013·Granted Oct 28, 2014·0 cites·16 claims
- 4161US6680489B1Amorphous silicon carbide thin film coatingADVANCED TECH MATERIALS·Filed 2000·Granted Jan 20, 2004·9 cites·10 claims
- 4260US8378463B2Orientation of electronic devices on mis-cut substratesCREE INC·Filed 2010·Granted Feb 19, 2013·2 cites·29 claims
- 4354US7884447B2Laser diode orientation on mis-cut substratesCREE INC·Filed 2006·Granted Feb 8, 2011·3 cites·29 claims
- 4447US8728236B2Low dislocation density III-V nitride substrate including filled pits and process for making the sameXU XUEPING·Filed 2011·Granted May 20, 2014·0 cites·34 claims
- 4546US6268229B1Integrated circuit devices and methods employing amorphous silicon carbide resistor materialsADVANCED TECH MATERIALS·Filed 1999·Granted Jul 31, 2001·10 cites·47 claims
- 4644US2006029832A1High surface quality GaN wafer and method of fabricating sameXU XUEPING·Filed 2005·Application pending·0 cites
- 4743US2002033663A1Fabrication and structure of electron emitters coated with material such as carbonFiled 2001·Application pending·0 cites
- 4835US2007018198A1High electron mobility electronic device structures comprising native substrates and methods for making the sameBRANDES GEORGE R·Filed 2005·Application pending·0 cites
- 4935US2002096684A1Amorphous silicon carbide thin film articlesFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →