Inventor · disambiguated record
Yao-Wen Chang
Also filed as: CHANG YAO-WEN
168 granted patents·71 pending applications·1,168 citations·filing 1994–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD101MACRONIX INT CO LTD66CHANG YAO-WEN10ANAGLOBE TECH INC7PENG CHEN4
Top patents by PatentIndex Score
239 records- 0199US6320786B1Method of controlling multi-state NROMMACRONIX INT CO LTD·Filed 2001·Granted Nov 20, 2001·431 cites·4 claims
- 0298US10290701B1MIM capacitor, semiconductor structure including MIM capacitors and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 14, 2019·29 cites·20 claims
- 0398US10163651B1Structure and method to expose memory cells with different sizesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·32 cites·20 claims
- 0498US9954166B1Embedded memory device with a composite top electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 24, 2018·29 cites·20 claims
- 0598US6486028B1Method of fabricating a nitride read-only-memory cell vertical structureMACRONIX INT CO LTD·Filed 2001·Granted Nov 26, 2002·190 cites·20 claims
- 0697US11581484B2Semiconductor structure, electrode structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·2 cites·20 claims
- 0797US9711713B1Semiconductor structure, electrode structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 18, 2017·14 cites·18 claims
- 0896US11818962B2Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·2 cites·20 claims
- 0996US11721794B2Method for manufacturing reflective structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 8, 2023·2 cites·20 claims
- 1096US9257642B1Protective sidewall techniques for RRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 9, 2016·18 cites·19 claims
- 1195US10879266B1Semiconductor device and operating method thereofMACRONIX INT CO LTD·Filed 2020·Granted Dec 29, 2020·4 cites·18 claims
- 1295US10043705B2Memory device and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 7, 2018·13 cites·20 claims
- 1394US12119035B2Spacer film scheme for polarization improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 15, 2024·1 cites·20 claims
- 1494US10276779B2Top electrode cap structure for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·9 cites·20 claims
- 1594US9761799B2Bottom electrode structure for improved electric field uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 12, 2017·10 cites·20 claims
- 1694US9502649B2Bottom electrode structure for improved electric field uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·10 cites·20 claims
- 1791US11527713B2Top electrode via with low contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·3 cites·20 claims
- 1891US10741262B2NAND flash operating techniques mitigating program disturbanceMACRONIX INT CO LTD·Filed 2018·Granted Aug 11, 2020·11 cites·17 claims
- 1990US12354633B2Spacer film scheme form polarization improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·20 claims
- 2090US9825117B2MIM/RRAM structure with improved capacitance and reduced leakage currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 21, 2017·5 cites·20 claims
- 2189US2025357407A1Upper conductive structure having multilayer stack to decrease fabrication costs and increase performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2288US12150394B2Memory device structure for reducing thermal crosstalkTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 19, 2024·1 cites·20 claims
- 2388US11121308B2Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·3 cites·20 claims
- 2488US10275559B2Method for legalizing mixed-cell height standard cells of ICTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 30, 2019·6 cites·20 claims
- 2588US6465849B1CMOS structure having dynamic threshold voltageMACRONIX INT CO LTD·Filed 2002·Granted Oct 15, 2002·44 cites·15 claims
- 2687US11257997B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 22, 2022·2 cites·20 claims
- 2787US2025299697A1Spacer film scheme form polarization improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2886US12225829B2Semiconductor structure, electrode structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 2986US9450183B2Memory structure having top electrode with protrusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 20, 2016·5 cites·20 claims
- 3085US12274182B2Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 3185US11183394B2Structure and method to expose memory cells with different sizesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 23, 2021·1 cites·20 claims
- 3285US11088239B2Cap structure for trench capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·3 cites·20 claims
- 3385US11024774B2Display device reflector having improved reflectivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 1, 2021·2 cites·20 claims
- 3485US10763273B2Vertical GAA flash memory including two-transistor memory cellsMACRONIX INT CO LTD·Filed 2018·Granted Sep 1, 2020·4 cites·20 claims
- 3583US10468587B2Semiconductor structure, electrode structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 5, 2019·2 cites·20 claims
- 3682US9543375B2MIM/RRAM structure with improved capacitance and reduced leakage currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 10, 2017·4 cites·20 claims
- 3782US8644081B2Flash memory device and programming method thereofCHANG HSING-WEN·Filed 2011·Granted Feb 4, 2014·9 cites·8 claims
- 3882US2024404975A1Upper conductive structure having multilayer stack to decrease fabrication costs and increase performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3982US2025234791A1Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4081US9633920B2Low damage passivation layer for III-V based devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 25, 2017·4 cites·17 claims
- 4181US2025318144A1Bottom-electrode interface structure for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4280US12424579B2Integrated chip including an upper conductive structure having multilayer stack to decrease fabrication costs and increase performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
- 4380US9830416B2Method for analog circuit placementANAGLOBE TECH INC·Filed 2016·Granted Nov 28, 2017·5 cites·12 claims
- 4480US8759234B2Deposited material and method of formationCHANG YAO-WEN·Filed 2011·Granted Jun 24, 2014·3 cites·20 claims
- 4580US8340141B2Method of operating all-fiber-based ultra pulse laser systemCHANG YAO-WEN·Filed 2012·Granted Dec 25, 2012·3 cites·2 claims
- 4680US7707536B2V-shaped multilevel full-chip gridless routingSPRINGSOFT USA INC·Filed 2007·Granted Apr 27, 2010·16 cites·24 claims
- 4780US2025344397A1Ferroelectric memory device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4879US9722011B2Film scheme for MIM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 1, 2017·3 cites·20 claims
- 4979US8040927B2Ring or linear cavity of all-fiber-based ultra short pulse laser system and method of operating the sameIND TECH RES INST·Filed 2010·Granted Oct 18, 2011·3 cites·17 claims
- 5079US2025359079A1Mim capacitor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 239 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →