Inventor · disambiguated record
Ya-Lan Chang
Also filed as: CHANG YA-LAN
12 granted patents·5 pending applications·21 citations·filing 2015–2025
88Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD17
Top patents by PatentIndex Score
17 records- 0196US11532748B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·3 cites·20 claims
- 0293US11855185B2Multilayer masking layer and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·16 claims
- 0391US11764280B2Method for fabricating metal gate devices and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 19, 2023·2 cites·20 claims
- 0490US9660084B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·5 cites·20 claims
- 0590US2025359114A1Multilayer masking layer and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0689US10269963B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·4 cites·20 claims
- 0789US10090396B2Method for fabricating metal gate devices and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 2, 2018·4 cites·20 claims
- 0886US2024372000A1Semiconductor Device Structure and Method for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0986US2024387678A1Method for fabricating metal gate devices and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1085US12159916B2Method for fabricating metal gate devices and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 3, 2024·0 cites·20 claims
- 1183US2024395907A1Multilayer masking layer and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1280US12100765B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 24, 2024·0 cites·20 claims
- 1378US10790394B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·1 cites·20 claims
- 1478US2025006500A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1577US12068162B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 1669US11495464B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·0 cites·20 claims
- 1763US10714587B2Method for fabricating metal gate devices and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →