Inventor · disambiguated record
Ya-Yi Cheng
Also filed as: CHENG YA-YI
13 granted patents·9 pending applications·21 citations·filing 2018–2025
87Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD22
Top patents by PatentIndex Score
22 records- 0195US10847411B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 24, 2020·12 cites·20 claims
- 0292US10535748B2Method of forming a contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·6 cites·20 claims
- 0386US12417945B2Contact features of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 16, 2025·1 cites·20 claims
- 0485US2025287628A1Contact with a Silicide RegionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0583US10475702B2Conductive feature formation and structure using bottom-up filling depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 12, 2019·2 cites·20 claims
- 0683US2025349616A1Contact features of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0783US2024379433A1Conductive feature formation and structure using bottom-up filling depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0879US12328890B2Contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
- 0977US2025343047A1Fin field-effect transistor device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1077US2025357191A1Conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1176US2024387265A1Contact features of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1274US2025316536A1Contact features of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1373US12482705B2Conductive feature formation and structure using bottom-up filling depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 25, 2025·0 cites·20 claims
- 1473US12272600B2Contact features of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
- 1570US11411094B2Contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·0 cites·20 claims
- 1670US2024363353A1Fin field-effect transistor device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1769US12237218B2Method of fabricating contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 25, 2025·0 cites·15 claims
- 1868US11532503B2Conductive feature structure including a blocking regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 1966US10943823B2Conductive feature formation and structure using bottom-up filling depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·0 cites·20 claims
- 2065US2025167045A1Method of fabricating contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2159US12308292B2Methods of forming semiconductor device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 2256US10804140B2Interconnect formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 13, 2020·0 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →