Inventor · disambiguated record
Yari Ferrante
Also filed as: FERRANTE YARI
13 granted patents·2 pending applications·17 citations·filing 2018–2022
86Inventor score
Top patents by PatentIndex Score
15 records- 0191US11804321B2Tunable templating layers for perpendicularly magnetized Heusler filmsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 31, 2023·2 cites·20 claims
- 0290US11665979B2Magnetic junctions having enhanced tunnel magnetoresistance and utilizing heusler compoundsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 30, 2023·2 cites·11 claims
- 0390US10957848B2Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF)IBM·Filed 2019·Granted Mar 23, 2021·3 cites·34 claims
- 0489US10937953B2Tunable tetragonal ferrimagnetic heusler compound with PMA and high TMRSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 2, 2021·3 cites·27 claims
- 0585US10651234B2Templating layers for forming highly textured thin films of heusler compounds switchable by application of spin transfer torqueSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 12, 2020·2 cites·23 claims
- 0681US11005029B2Spin transfer torque switching of a magnetic layer with volume uniaxial magnetic crystalline anistotropySAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 11, 2021·5 cites·20 claims
- 0773US11557721B2Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF)IBM·Filed 2021·Granted Jan 17, 2023·0 cites·25 claims
- 0869US12136447B2Tetragonal half metallic half-Heusler compoundsIBM·Filed 2022·Granted Nov 5, 2024·0 cites·25 claims
- 0968US11756578B2Ferrimagnetic Heusler compounds with high spin polarizationSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 12, 2023·0 cites·20 claims
- 1064US11538987B2IrAl as a non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF) with Heusler compoundsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 27, 2022·0 cites·20 claims
- 1163US11925124B2Insertion layers for perpendicularly magnetized Heusler layers with reduced magnetic dampingSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·11 claims
- 1263US11751486B2Templating layers for perpendicularly magnetized Heusler films/compoundsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 5, 2023·0 cites·20 claims
- 1355US12317508B2Tuning perpendicular magnetic anisotropy of Heusler compound in MRAM devicesIBM·Filed 2021·Granted May 27, 2025·0 cites·21 claims
- 1450US2023180624A1Magnetic tunnel junction including hexagonal multi-layered structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1540US2023320231A1Tetragonal half metallic heusler compoundsIBM·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →