Inventor · disambiguated record
Yasushi Hamazawa
Also filed as: HAMAZAWA YASUSHI
7 granted patents·7 pending applications·77 citations·filing 2000–2025
81Inventor score
Files withROHM CO LTD14
Top patents by PatentIndex Score
14 records- 0184US6264167B1Semiconductor deviceROHM CO LTD·Filed 2000·Granted Jul 24, 2001·50 cites·6 claims
- 0280US11094443B2Electronic componentROHM CO LTD·Filed 2017·Granted Aug 17, 2021·3 cites·27 claims
- 0379US9570603B2Semiconductor device having trench gate structure and method for manufacturing the semiconductor deviceROHM CO LTD·Filed 2015·Granted Feb 14, 2017·3 cites·22 claims
- 0471US6914298B1Double diffusion MOSFET with N+ and P+ type regions at an equal potentialROHM CO LTD·Filed 2003·Granted Jul 5, 2005·21 cites·10 claims
- 0557US2024030276A1Isolator, insulating module, and gate driverROHM CO LTD·Filed 2023·Application pending·0 cites
- 0654US2025324661A1Semiconductor deviceROHM CO LTD·Filed 2025·Application pending·0 cites
- 0753US2024030105A1Semiconductor deviceROHM CO LTD·Filed 2023·Application pending·0 cites
- 0850US2022208674A1Insulating chipROHM CO LTD·Filed 2021·Application pending·0 cites
- 0946US2017092759A1Semiconductor device having trench gate structure and method for manufacturing the semiconductor deviceROHM CO LTD·Filed 2016·Application pending·0 cites
- 1045US2024204099A1Semiconductor device and method for manufacturing sameROHM CO LTD·Filed 2021·Application pending·0 cites
- 1145US2023378345A1Semiconductor deviceROHM CO LTD·Filed 2021·Application pending·0 cites
- 1244US11114572B2Semiconductor device and method for manufacturing semiconductor deviceROHM CO LTD·Filed 2020·Granted Sep 7, 2021·0 cites·14 claims
- 1340US9704985B2Semiconductor device including a channel region and method for manufacturing the semiconductor deviceROHM CO LTD·Filed 2014·Granted Jul 11, 2017·0 cites·23 claims
- 1439US11552175B2Semiconductor deviceROHM CO LTD·Filed 2020·Granted Jan 10, 2023·0 cites·5 claims
Join the waitlist — get patent alerts
Get an alert when Yasushi Hamazawa files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →