Inventor · disambiguated record
Yang Hong
Also filed as: HONG YANG
9 granted patents·89 citations·filing 2013–2017
85Inventor score
Top patents by PatentIndex Score
9 records- 0196US9583167B2Low power memory cell with high sensing marginGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Feb 28, 2017·54 cites·20 claims
- 0289US9349772B2Methods for fabricatingintegrated circuits with spin torque transfer magnetic randomaccess memory (STT-MRAM) including a passivation layer formed along lateral sidewalls of a magnetic tunnel junction of the STT-MRAMGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted May 24, 2016·8 cites·17 claims
- 0389US9165610B1Non-volatile memory cell arrays and methods of fabricating semiconductor devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Oct 20, 2015·8 cites·20 claims
- 0488US9076962B2Nonvolative memoryGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Jul 7, 2015·12 cites·20 claims
- 0583US9082964B2Nonvolative memory with filamentGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Jul 14, 2015·5 cites·19 claims
- 0659US9218875B2Resistive non-volatile memoryGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Dec 22, 2015·2 cites·22 claims
- 0744US10347312B2Memory circuit and method for operating a first MRAM and a second MRAM set of memory cells configured to operate in a direct access mode and/or refresh modeINTEL IP CORP·Filed 2017·Granted Jul 9, 2019·0 cites·17 claims
- 0842US9824737B2Memory circuit and method for operating a first and a second set of memory cells in direct memory access mode with refreshINTEL IP CORP·Filed 2015·Granted Nov 21, 2017·0 cites·19 claims
- 0937US9196356B2Stackable non-volatile memoryGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Nov 24, 2015·0 cites·23 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →