Inventor · disambiguated record
Yasuhiro Kagawa
Also filed as: KAGAWA YASUHIRO
32 granted patents·2 pending applications·88 citations·filing 1992–2022
95Inventor score
Files withMITSUBISHI ELECTRIC CORP26FURUKAWA AKIHIKO4FUJI PHOTO FILM CO LTD1KAGAWA YASUHIRO1KAWAKAMI TSUYOSHI1
Top patents by PatentIndex Score
34 records- 0191US9741797B2Insulated gate silicon carbide semiconductor device and method for manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Aug 22, 2017·10 cites·13 claims
- 0290US10510843B2Insulated gate silicon carbide semiconductor device and method for manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Dec 17, 2019·5 cites·26 claims
- 0390US8716717B2Semiconductor device and method for manufacturing the sameKAWAKAMI TSUYOSHI·Filed 2011·Granted May 6, 2014·12 cites·15 claims
- 0489US11984492B2Silicon carbide semiconductor device, power converter, and method of manufacturing silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2022·Granted May 14, 2024·1 cites·6 claims
- 0586US10157986B2Silicon carbide semiconductor device and method for manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Dec 18, 2018·5 cites·13 claims
- 0683US10229969B2Power semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Mar 12, 2019·4 cites·11 claims
- 0782US9825164B2Silicon carbide semiconductor device and manufacturing method for sameMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Nov 21, 2017·5 cites·8 claims
- 0882US9425261B2Silicon-carbide semiconductor device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Aug 23, 2016·5 cites·12 claims
- 0978US9614029B2Trench-gate type semiconductor device and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Apr 4, 2017·2 cites·16 claims
- 1078US9224860B2Trench-gate type semiconductor device and manufacturing method thereforKAGAWA YASUHIRO·Filed 2011·Granted Dec 29, 2015·5 cites·17 claims
- 1178US8093950B2Power amplifier having transformerFURUKAWA AKIHIKO·Filed 2009·Granted Jan 10, 2012·10 cites·5 claims
- 1276US5337113APhotosensitive material processing apparatusFUJI PHOTO FILM CO LTD·Filed 1992·Granted Aug 9, 1994·13 cites·20 claims
- 1371US9985093B2Trench-gate type semiconductor device and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 2017·Granted May 29, 2018·1 cites·11 claims
- 1469US9525057B2Semiconductor deviceMIURA NARUHISA·Filed 2013·Granted Dec 20, 2016·2 cites·17 claims
- 1567US9111751B2Silicon carbide semiconductor device and method of fabricating sameFURUKAWA AKIHIKO·Filed 2011·Granted Aug 18, 2015·2 cites·6 claims
- 1664US8969960B2Power semiconductor deviceFURUKAWA AKIHIKO·Filed 2012·Granted Mar 3, 2015·2 cites·4 claims
- 1763US9337271B2Silicon-carbide semiconductor device and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 2013·Granted May 10, 2016·1 cites·11 claims
- 1863US9293572B2Power semiconductor deviceFURUKAWA AKIHIKO·Filed 2010·Granted Mar 22, 2016·2 cites·16 claims
- 1962US9698221B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Jul 4, 2017·1 cites·18 claims
- 2055US12107158B2SiC-mosfetMITSUBISHI ELECTRIC CORP·Filed 2021·Granted Oct 1, 2024·0 cites·13 claims
- 2154US2019348524A1Silicon carbide semiconductor device, power converter, and method of manufacturing silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2019·Application pending·0 cites
- 2249US11658238B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2020·Granted May 23, 2023·0 cites·15 claims
- 2347US9972676B2Silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted May 15, 2018·0 cites·10 claims
- 2446US11217449B2Semiconductor device and method of manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Jan 4, 2022·0 cites·13 claims
- 2546US10580889B2Semiconductor device and method of manufacturing thereof, and power conversion apparatusMITSUBISHI ELECTRIC CORP·Filed 2018·Granted Mar 3, 2020·0 cites·8 claims
- 2646US9773874B2Silicon carbide semiconductor device and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Sep 26, 2017·0 cites·6 claims
- 2745US9954072B2Silicon-carbide semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Apr 24, 2018·0 cites·12 claims
- 2844US10431658B2Silicon carbide semiconductor device, manufacturing method therefor and power conversion apparatusMITSUBISHI ELECTRIC CORP·Filed 2018·Granted Oct 1, 2019·0 cites·13 claims
- 2942US10797169B2Silicon carbide semiconductor device and power conversion apparatusMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Oct 6, 2020·0 cites·14 claims
- 3042US2016211334A1Silicon carbide semiconductor device and method for manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2014·Application pending·0 cites
- 3139US10199457B2Silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Feb 5, 2019·0 cites·17 claims
- 3237US10347724B2Silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Jul 9, 2019·0 cites·11 claims
- 3337US10312233B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Jun 4, 2019·0 cites·9 claims
- 3434US10453951B2Semiconductor device having a gate trench and an outside trenchMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Oct 22, 2019·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →